新型高效率低漣波電荷幫浦升壓轉換器之研製

Design and Implementation of a New High-Efficiency Low-Ripple Charge-Pump Boost Converter

陳佳萱(Chia-Hsuan Chen)

指導教授 ： 黃育賢 ； 陳建中

國立臺北科技大學/電資學院/電腦與通訊研究所/碩士(2012年)

摘要

本論文提出一個低漣波高效率電荷幫浦升壓型轉換器，是以切換式電容轉換器及切換式轉換器組合而成。所提出的架構具有切換式轉換器的高效率特性，而跟傳統升壓型轉換器相比，有著較小的輸出漣波特性。對於後端通訊、射頻、音頻及影像應用表現更優。
論文第一部份為使用脈波寬度調變技術設計之新型高效率低漣波電荷幫浦升壓轉換器，本晶片控制迴路利用脈波寬度調變電路產生出責任週期，使轉換器可穩壓在所需的電壓，此部分將呈現暫態響應、效率及輸出漣波之模擬及量測結果。此電路採用TSMC 0.35μm 2P4M CMOS製程來實現，晶片面積為1.49×1.49mm2(含PADs)。
本論文第二部份為具有自我調適型斜率產生器與磁滯控制技術之新型高效率低漣波電荷幫浦升壓轉換器。為了增進第一部分的暫態響應，此電路提出一自我調適型斜率產生器，產生的斜率會隨著輸出電壓的變化而改變，另外，電壓磁滯上下限也會因為輸出電壓變化而改變，藉由以上兩種技術來減少暫態穩定時間。此電路採用TSMC 0.35μm 2P4M CMOS製程來實現，晶片面積為1.49×1.49mm2(含PADs)。

關鍵字

低漣波 ； 升壓轉換器 ； 電荷幫浦

並列摘要

The low-ripple high-efficiency charge-pump boost converter which combines switching capacitor converter with switching converter is proposed in this thesis. The proposed architecture has high-efficiency characteristic of switching converter, and compares with conventional boost converter, the proposed architecture has small-ripple characteristic. For communication, RF, audio, and imaging application, the proposed architecture makes performance better.
The first part of this thesis is low-ripple high-efficiency charge-pump boost converter using pulse-width-modulation (PWM) techniques. The controller of the proposed circuit which achieves a stable output voltage produces duty cycle by using PWM in the chip. This part presents simulation and experiment of transient response, efficiency and output ripple. The proposed circuit is implemented with TSMC 0.35μm CMOS 2P4M process, and the area is 1.49×1.49mm2(with PADs).
The low-ripple charge-pump boost converter using hysteresis-controlled techniques with adaptive slope generator is presented in the second part of this thesis. For enhancing transient response of first part in this thesis, the adaptive slope generator whose slope is changed by output voltage variation is proposed in this circuit. In addition, hysteresis-controlled upper and lower limit level is also changed by output voltage variation. By using above two schemes, the transient response is enhanced. The proposed circuit is implemented with TSMC 0.35μm CMOS 2P4M process, and the area is 1.49×1.49mm2(with PADs).

並列關鍵字

Low ripple ； boost converter ； charge pump

參考文獻

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