CMOS-MEMS平面磁通閘磁量計之薄膜磁芯特性研究

Characterization of thin-film magnetic core for the CMOS-MEMS Planar Fluxgate

陳亭宏(Ting-Hong Chen)

指導教授 ： 呂志誠 ； 鄭振宗

國立臺北科技大學/機電學院/機電整合研究所/碩士(2009年)

https://doi.org/10.6841/NTUT.2009.00179

摘要

本研究使用CMOS-MEMS製程設計微小化之磁通閘，此晶片採平面線圈設計，並以後製程方式以磁控濺鍍方法整合磁性薄膜，製作磁通閘磁量計。為了解磁性材料之交流特性，我們設計了不同鍍膜參數，並量測激發電流對軟磁材料的磁滯曲線影響，探討不同參數下薄膜的特性，並設計最佳參數，找出符合感測器使用之軟磁材料當作磁芯，作為感測元件所需之磁性薄膜，其結果提將有助於開發高線性晶片式之磁通閘感測元件，對於未來各種應用具有重要的價值。本磁通閘磁量計可應用於非破壞檢測、金屬探測、以及電子羅盤等。

關鍵字

磁通閘 ； CMOS-MEMS ； 磁量計

並列摘要

In this thesis, the CMOS-MEMS planar fluxgates were designed and fabricated. The planar coils on the sensors were made by TSMC 0.35 μm process supported by CIC. The thin-film permalloy cores were made by RF sputtering and patterned by photolithography in the post process. The magnetic characteristics of the thin-film soft magnetic cores were characterized by measuring the m-H curves in order to find the optimal parameters of sputtering process. The result is helpful in manufacturing the micro-fluxgate magnetometer, which will be suitable for applications in non-destructive testing, metal detection, and electronic compass.

並列關鍵字

fluxgate ； CMOS-MEMS ； magnetometer

參考文獻

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