新型CMOS-MEMS微磁通閘設計與特性量測

Design and characterizations of novel CMOS-MEMS micro-fluxgate magnetic sensors

黃文聖(Wen-Sheng Huang)

指導教授 ： 呂志誠 ； 鄭振宗

國立臺北科技大學/機電學院/機電整合研究所/碩士(2010年)

摘要

本論文研究使用CMOS-MEMS製程，設計微小化磁通閘磁量計(micro-fluxgate magnetic sensor)。在本論文中，分別研究設計平面式磁通閘與立體式磁通閘，並在後製程中整合磁性薄片磁芯，此磁芯採用蝕刻方式製作，並且利用對準貼合方式黏著在晶片上。此外，分別量測其磁場-電壓轉移率、環境磁場量測、雜訊量測、頻率響應與高溫環境影響。所設計的立體式磁通閘，其磁場-電壓轉換率為49.4 V/T；在1 Hz下的雜訊輸出為12.4 nT/√Hz，在10 Hz下的雜訊輸出為1.20 nT/√Hz；設定激發頻率400 kHz，激發振幅5 V時，其頻寬為3.6 kHz，反應時間為0.28 ms，功率消耗為103 mW；可清楚辨別地球南北極，在高溫下仍可正常工作。結果將有助於未來開發靈敏度更佳的晶片式磁通閘感測器，對於在各種微小磁場的量測應用擁有重要的價值。

關鍵字

磁通閘 ； 磁場感測器 ； 平面式 ； 立體式

並列摘要

In this paper, we study CMOS-MEMS micro fluxgate sensors, including device design, manufacturing process and practical measurement. Our design concept that differs from recently developed planar CMOS fluxgate sensors realizes the implementation of conventional wire-winded fluxgate sensors and features miniature dimensions and simple post-CMOS process. The sensitivity of the 3D fluxgate sensor is 49.4 V/T, the equivalent magnetic noise is 12.4 nT/√Hz at 1 Hz, the equivalent magnetic noise is 1.20 nT/√Hz at 10 Hz, power consumption is 103 mW, the bandwidth is 3.6 kHz, response time is 0.28 ms and it can work in high temperature. It demonstrates excellent and promising characteristics for serving as a sensitive device such as an electronic compass.

並列關鍵字

micro fluxgate ； magnetic sensor ； CMOS-MEMS sensor

參考文獻

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