新式雙頻段射頻功率放大器整合互補式金屬氧化物半導體微機電開關之研究

本論文在主被動整合電路的架構上，提出了新式可切換雙頻段功率放大器的架構，有別以往常見的單一匹配網路設計成寬頻或是多頻段匹配，本文的網路匹配架構可以達到更快速的設計、多頻段、多系統應用等獨特的功用。前三章中分別介紹了，本論文的研究背景、CMOS製程與射頻功率放大器之設計與射頻微機電開關設計之後製程實驗，透過詳細的研究背景知識介紹到模擬設計，最後再將實作完整的呈現。第四章的部分敘述了整個主被動整合電路架構的解決方案及量測結果，並在第五章結論與未來展望的部分討論目前的研究結果與可衍伸出來的研究方向等問題。本論文主要為使用台積電標準CMOS 0.18-μm製程整合射頻微機電開關元件與功率放大器之研究，利用微機電開關之物理特性在單一高頻電路上實現可切換式雙頻段射頻功率放大器，利用ADS、HFSS、CoventorWare等EDA模擬軟體輔助整體設計過程，並導入化鎳浸金製程（EN/IG），有效降低微機電開關之吸附電壓與接觸電阻值，並在內文中提供完整的設計流程及實驗數據。

關鍵字

CMOS-MEMS ；微機電開關；功率放大器；雙頻段；多頻段；化鎳浸金

並列摘要

In this thesis, there is a new exchangeable dual-band power amplifier of the active and positive integrated architecture. Different from the previous studies for wide-band or multi-band on single matching network, it provided that it could be faster in design flow, and apply for multi-band and multi-system design methodology uniquely. The first three chapters were introduced into the research’s background knowledge, CMOS process and radio frequency MEMS switches design and post-process approaches. At the end of the third chapter, there are completely implementations records. The forth chapter is that it described the whole solutions and measurements of the active and positive components integrated architecture in here. The fifth chapter and future work, it shown the current research results and other issues could be extended from the research. The mainly experimental was that utilized 0.18-μm standard CMOS Process by tsmc foundry company and implemented the all post-process by the author. This study is integrated RF CMOS-MEMS switches into the power amplifier circuit for reaching the switchable dual-band matching networks. It necessary utilized several EDA tools for assisting the whole design process such as Agilent’s ADS, Ansys HFSS, CoventorWare, and so on. Besides that, it introduced EN/IG process in this study for reducing the intrinsic contact resistance and pull-down voltage at the same time. Most noteworthy is that there are all complete design flows and experimental results.

並列關鍵字

CMOS-MEMS ； RF-MEMS Switch ； Power Amplifier ； Dual-band ； Multi-band ； EN/IG

參考文獻

[1] C. T. C. Nguyen, L. P. B. Katehi, and G. M. Rebeiz, "Micromachined devices for wireless communications," Proceedings of the IEEE, vol. 86, pp. 1756-1768, 1998.

[2] Hajimiri, "Next-Generation CMOS RF Power Amplifiers," Microwave Magazine, IEEE, vol. 12, pp. 38-45, 2011.

[5] S. C. Cripps, RF Power Amplifiers for Wireless Communications, 2 ed.: ARTECH HOUSE, 2006.

[6] N. O. Sokal and A. D. Sokal, "Class E-A new class of high-efficiency tuned single-ended switching power amplifiers," Solid-State Circuits, IEEE Journal of, vol. 10, pp. 168-176, 1975.

[7] F. H. Raab, "Idealized operation of the class E tuned power amplifier," Circuits and Systems, IEEE Transactions on, vol. 24, pp. 725-735, 1977.

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新式雙頻段射頻功率放大器整合互補式金屬氧化物半導體微機電開關之研究

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