應用於行動電話之全積體化高功率多頻帶CMOS功率放大器

Fully Integrated High-power Multi-band CMOS Power Amplifier for Mobile Applications

洪善慈(Shan-Tzu Sean Hung)

指導教授 ： 陳怡然

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.11111

摘要

LTE行動通訊技術從2004年由第三代合作夥伴計畫(3GPP)提出至今，其行動裝置已在全球迅速成長，而LTE的頻帶多達四十四個，依據地區、國家不同，使用頻段也各有差異。為了與過去傳統的3G和全球行動通訊系統(GSM)相互並行，以達成全球通用之行動通訊裝置，具有支持多模(Multi-mode)、多頻(Multi-band)的架構已成為手機射頻前端發射電路的設計重點。
本論文採用互補式金屬氧化物半導體(CMOS)製程來製作使用耦合L形功率結合變壓器之全積體化CMOS功率放大器，並在面積縮小化上進行改良。第一部分採用0.13微米CMOS製程製作高功率與高效率之雙級功率放大器，第二部分使用90奈米製程製作單級高線性度功率放大器。克服CMOS製程低功率輸出的限制，並且在無任何外加線性化電路以及預失真補償的情況下，製作可支援多個長期演進技術頻帶規範的功率放大器。
使用0.13微米CMOS製程製作之功率放大器在1.95 GHz時，由模擬，其轉換功率增益為27.84 dB，P_1dB為33.863 dBm，PAE在P_1dB時為39.474 %，而P_SAT為34.719 dBm，PAE在P_SAT時為43.458 %，可支援16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band25 (1850 MHz – 1915 MHz)等三個頻帶
使用90奈米CMOS製程之功率放大器在1.95 GHz時，由模擬，其轉換功率增益為17.21 dB，P_1dB為32.38 dBm，PAE在P_1dB時為39.85 %，而P_SAT為32.87 dBm，PAE在P_SAT時為40.53 %，可支援16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band3 (1710 MHz – 1785 MHz)、Band4 (1710 MHz – 1755 MHz)、Band9 (1749.9 MHz – 1784.9 MHz)、Band25 (1850 MHz – 1915 MHz)等6個頻帶。

關鍵字

長期演進技術 ； 功率放大器 ； 功率結合變壓器 ； 耦合L形功率結合變壓器 ； 功率電晶體

並列摘要

LTE handset sales grow rapidly since it was announced by 3GPP in 2004. People in different countries adopt different LTE bands because there are 44 LTE bands. Therefore, it is an important issue for a handset device which is able to support multi-mode and multi-band mobile communication systems in order to satisfy the users in different countries.
This thesis presents the CMOS power amplifiers (PAs) which are implemented in 0.13 μm and 90 nm CMOS technology. Due to the use of coupled L-shape power-combining transformer, it successfully minimizes the PA layout area while remaining high output power. The PA implemented in 0.13 μm CMOS technology has two stages with high power and high efficiency. The other implemented in 90 nm CMOS technology has one stage with high linearity.
From the simulation, the PA implemented in 0.13 μm CMOS technology achieves a P_1dB of 33.863 dBm with PAE of 39.474 %, and a P_SAT of 34.719 dBm with PAE of 43.458 %, and transducer gain of 27.84 dB at 1.95 GHz. The 0.13 μm CMOS PA is able to support 16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band25 (1850 MHz – 1915 MHz).
From the simulation, he PA implemented in 90 nm CMOS technology achieves a P_1dB of 32.38 dBm with PAE of 39.85 %, and a P_SAT of 32.87 dBm with PAE of 40.53 %, and transducer gain of 17.21 dB at 1.95 GHz. The 90 nm CMOS PA is able to support 16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band 3 (1710 MHz – 1785 MHz)、Band4 (1710 MHz – 1755 MHz)、Band9 (1749.9 MHz – 1784.9 MHz)、Band25 (1850 MHz – 1915 MHz).

並列關鍵字

LTE ； Power Amplifier ； Power Combining Transformer ； Coupled L-shape Transformer ； Power Cell

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