單光子雪崩檢光二極體特性分析與抑制電路之模擬與量測

Analysis, Simulations and Measurement of 1550nm Single Photon Avalanche Photodiode and Quenching Circuits

陳怡賓(Yi-Bin Chen)

指導教授 ： 何文章

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2009年)

摘要

近年來，單光子檢光器廣泛的應用於檢測微弱光源及高速光源方面的應用，像是在量子密碼、光時域反射儀及三維影像量測等。本論文的目的主要係對APD應用在光通訊波段的光子檢測，我們針對其單光子工作原理與利用不同的抑制電路對於光子檢測的影響做一探討。
首先，我們利用電路模擬軟體PSpice來模擬APD操作在Geiger-Mode下的等效模型特性，並與實際的量測做比較，以分析及驗證其動作原理的正確性。接著依據連續光及脈衝光的不同，分別製作不同的抑制電路，並架設單光子檢測系統，透過不同的參數調整，如超額偏壓、脈衝寬度、檢測頻率及工作溫度來量測檢測系統的重要參數。根據量測的結果，我們可以分析不同抑制電路對於檢測光源的表現。在本實驗中我們所使用的是InGaAs/InP 材料的APD，光源是使用波長1550 nm的雷射光源。
最後，我們成功的利用模擬及實作的方式，驗證了APD操作在Geiger-Mode的特性。在passive quenching的架構中，最低溫度-40 oC的環境下，我們量測到最低DCR的值為2.2×106 c/s，檢測效率為7.5%，而NEP為5×10-15 W/Hz1/2。在Passive gated mode架構中，最低溫度-40 oC的環境下，我們量測到最低Pd的值為3.1%，檢測效率為9.14%，而NEP為3.49×10-15 W/Hz1/2。

關鍵字

雪崩檢光二極體 ； 單光子計數 ； 抑制電路 ； 暗計數率 ； 雜訊等效功率

並列摘要

Recently, single photon avalanche photodiode are widely applied to ultralow power light detection and ultrafast optical measurement, such as quantum key distribution, optical time domain reflectometry and three dimensional imaging. The purpose of this thesis is to confer different quenching circuits for single photon detection in optical communication wavelength.
Firstly, we used the simulation software PSpice to simulation the avalanche photodiode operating in Geiger mode and compared with the results of experiment. Then, we design the different quenching circuits for pulse light source and continuous wave light source, and setup the measurement system for characterizing the single photon detetection parameters, such as excess bias, gate width, gate frequency and operation temperature. By the results of experiment, we analyzed the performance of different quenching circuits for photon detection. In this experiment, we used the InGaAs/InP avalanche photodiode and the light source is DFB laser of 1550 nm.
Finally, we succeeded simulation and measurement the characteristic of avalanche photodiodes operating in Geiger mode. In passive quenching mode, we achieved the best performance at -40 oC, the DCR is 2.2×106 c/s, the detection efficiency is 7.5% and NEP is 5×10-15 W/Hz1/2. In passive gated mode, we achieved the best performance at -40 oC, the Pd is 3.1%, the detection efficiency is 9.14% and NEP is 3.49×10-15 W/Hz1/2.

並列關鍵字

Avalanche Photodiode ； Single Photon Counting ； Quenching Circuits ； Dark Count Rate ； Noise Equivalent Power

參考文獻

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