本研究是利用微波電漿噴射化學氣相沈積(Microwave Plasma Jet Chemical Vapor Deposition, MPJCVD)系統於碳化鎢基材上成長鑽石膜,MPJCVD系統為利用天線導引微波於天線尖端解離CH4+H2氣體,形成噴射電漿,此系統電漿具有高電子密度,較一般MPCVD的電漿能量更為集中,因而可改善傳統鐘罩式或管狀式微波電漿CVD系統中電漿功率密度過低與分佈不均之問題;因此有效控制製程條件故將比一般CVD有效的沉積高品質鑽石膜。 實驗利用WC-Co酸蝕除鈷後超音波震盪奈米鑽石液直接成長與酸蝕除鈷後先經過超音波震盪奈米鑽石液後先成長40分經爐冷後再成長一層鑽石膜,以SEM觀察各種前處理的成膜表面情形,利用RAMAN分析鑽石鍵結品質,利用XRD分析膜晶格擇優取向,利用壓痕試驗測試薄膜之附著性,AFM量測其表面粗糙度,並利用實刀測試測試鑽石膜實用度。 經壓痕實驗證實階段性成長薄膜較於直接成長鑽石膜附著性擁有更佳的附著性,而利用AFM量測階段性成長鑽石膜之表面粗糙度Ra為40 nm,相較於文獻直接成長鑽石膜之表面粗糙度Ra為207 nm來的優異,經過實刀測試後,被覆鑽石膜之碳化鎢刀具也較於未被覆鑽石膜之碳化鎢刀具更有效的減少鋁屑BUE(Built-up edge)的形成。
This study investigates the diamond films deposition on WC-Co subtract by microwave plasma jet chemical vapor deposition (MPJCVD) system, MPJCVD system utilizes a conical antenna to guide microwaves and to ignite plasma in an atmosphere filled with methane and hydrogen, and the plasma jet ionized from the inflowing reactive gases into hydrocarbon ion particles at the antenna tip. By the way, were deposited successfully the high quality diamond films. In this research, WC-Co subtract was etched by HNO3+H2O and shaked by ultrasonic in the diamond particles liquid and then use 1-step deposition or staged growth process method to grows diamond films. Diamond films were analyzed by SEM, XRD, Raman spectra, AFM, indenter test, and cutting test. The indenter test result shows that staged deposition method had more better adhesion than 1-step, the AFM result shows that the average roughness (Ra) for WC-Co with deposition diamond films is 40 nm, and that is better than ever. In the cutting test result shows that WC-Co tools coated with diamond films is less Al BUE (Built-up edge) on the cutting tool than uncoated tool.