本研究使用TSMC 0.35 um互補式金氧半導體製程和TSMC 0.18 um互補式金氧半導體製程,透過後製程製作精密的壓力感測器,並使用CMOS製程中的金屬層當作感測電極和犧牲層,在0.35 um製作的空腔大約為0.64um而0.18um製作的空腔為0.53um。0.35 um製程晶片為單一的壓力電容值,0.18um感測器則有差動的兩個感測器,感測器最後使用SU8旋塗方式將感測器的蝕刻孔封住,0.35 um與0.18um晶片都是搭配壓克力封裝晶片,藉由水壓給予感測器薄膜壓力,水壓深度不同壓力也會不同,不同的壓力使感測器產生的電容也會不同,再透過阻抗分析儀6500b作量測,將電容值的變化數值做紀錄分析。
This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 μm and 0.35 um CMOS (complementary metal–oxide–semiconductor) process and postprocess.The metal layers of the CMOS process are used as the sensing electrodes and sacri?cial layers, the cavity spacing of commercial 0.35μm is 0.64um and the 0.18μm is 0.53μm.TSMC 0.35 is single capacitance senser, TSMC 0.18 is differential capacitance senser. Finally the two different fabrication senser,the etching holes in the pressure sensor are sealed with SU8. The chip of TSMC 0.35 and TSMC 0.18 is use Acrylic packaged,them through water pressure fore applied to sensor. The different water depth have different water pressure , through different water pressure to make sensor bring out different capacitance, finally impedance analyzers measure 6500B will detect capacitive variation, them record the measure data and analysis it