利用CMOS-MEMS 製程製作血壓計及顱內壓監測器

本研究使用TSMC 0.35 um互補式金氧半導體製程和後製程製作血壓計及顱內壓監測器，並使用CMOS製程中的金屬層當作感測電極和犧牲層，製作的空腔大約為0.64um。最後使用SU8或濺鍍鋁的方式將感測器的蝕刻孔封住，此感測器為共有8個感測單元，4個為可變電容另外4個為固定電容，並分別將可變和不可變的電容並聯，增加感測器的靈敏度，壓力感測器後端則有全差式電容感測電路作取值。量測結果表示感測壓力變化量大約為0~42.38kPa，電容變化為0~88fF，單一元件靈敏度為2.076 fF/kPa。

關鍵字

CMOS-MEMS ；壓力感測器；血管壓力；顱內壓力

並列摘要

The fabrication of a Blood Pressure Sensor and Intracranial Pressure monitoring using the TSMC 0.35 um complementary metal oxide semiconductor process and a post-process have been investigated. The metal layers of the CMOS process are used as the sensing electrodes and sacriﬁcial layers, with the cavity spacing about 0.64um. Finally the etching holes in the pressure sensor are sealed with SU8 or sputter deposition Al. This sensor is composed of eight sensing cells containing four variable capacitors and four reference capacitors. The variable and reference capacitors are parallel respectively, able to increase the sensitivity of the sensor. The pressure sensor is connected to fully-differential capacitive sensing circuit that readouts the capacitor variable value. The experimental results show that the pressure sensor has a capacitance variance of 0~88fF, and the sensitivity of 2.076 fF/kPa in pressure measurement range of 0~42.38kPa.

並列關鍵字

CMOS-MEMS ； Pressure sensor ； Blood Pressure Sensor ； Intracranial Pressure monitoring

參考文獻

[15]行政院衛生署國民健康局，高血壓防治手冊—高血壓偵測、控制與治療流程指引，民93.

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[4] K.-U. Kirstein, J. Sedivy, T. Salo,”A CMOS-based Tactile Sensor for Continuous Blood Pressure Monitoring,” Solid-State Circuits Conference, 2004.

國際替代計量

利用CMOS-MEMS 製程製作血壓計及顱內壓監測器

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