本研究論文主要探討由三個不同的操縱變因之下TEL(Transient Electroluminescence)法所獲得有機發光元件載子漂移率的數據分佈。利用統計連續分佈函數:Weibull、Gamma、Lognormal、Normal、Exponential來對載子漂移率數據做相關的統計分佈,並且計算其對於各個連續分佈的相關重要參數,依照最小Kolmogorov distance值與最大Log-likelihood值的準則,來選定最合適的連續分佈統計模型;對於在不同的變因之下量測的載子漂移率,其連續分佈函數的最佳配適度(Goodness of fit)也有所不同,在操作變因為R時Lognormal分佈為最合適分佈,變因為Vi則Gamma分佈為最合適的分佈,變因為Vf則Weibull分佈為最合適的分佈。根據統計分析結果,電子和電洞在有機發光元件的多層結構中再結合區的相對位置和寬度,可以由Lognormal連續分佈曲線的半高寬推算而得。結果在變因R時,再結合區的相對位置距離陰極3.98~37.12nm,寬度為33.14nm,變因Vi則為4.35~34.1nm,寬度為30.06nm,變因Vf則是11.48~48.51nm,寬度為37.03nm。
This thesis research is to investigate the optimal distribution functions of carrier mobility in organic light-emitting diode (OLED) by Transient Electroluminescence (TEL) method with 3 operational variables. Our carrier mobility data were used to fit various statistical distribution functions such as Weibull, Gamma, Lognormal, Normal, and Exponential distributions to find related parameters of the best-fit distribution for carrier mobility. The optimal carrier mobility distribution functions were determined from the minimum Kolmogorov distance and maximum Likelihood criterion. Our results reveal that the optimal carrier mobility distribution functions obtained from different operational variables are also different from each other. The Lognormal distribution is the optimal carrier mobility function with R as operational variable. The Gamma distribution is the optimal carrier mobility function with Vi as operational variable. The Weibull distribution is the optimal carrier mobility function with Vf as operational variable. The position and width of electron-hole recombination zone (RZ) in OLED can also be predicted from the full-width-half-maximum of distribution functions. The relative position and probable width of RZ is 3.98~37.12nm away from cathode side and 30.06nm respectively with R as operational variable. The relative position and probable width of RZ is 3.98~37.12nm away from cathode side and 33.14nm respectively with R as operational variable. The relative position and probable width of RZ is 4.35~34.1nm away from cathode side and 30.06nm respectively with Vi as operational variable. The relative position and probable width of RZ is 11.48~48.51nm away from cathode side and 37.03nm respectively with Vf as operational variable.