離子佈植濃度對射頻橫向擴散金氧半場效電晶體特性影響之研究

Characterization of RF LDMOS Transistors with Various P-body and Drift Region Implant Doses

張家豪(Chia-Hao Chang)

指導教授 ： 胡心卉 ； 陳坤明

國立臺北科技大學/電資學院/電腦與通訊研究所/碩士(2012年)

https://doi.org/10.6841/NTUT.2012.00399

摘要

本篇主要討論藉由不同的離子佈植劑量來了解射頻橫向擴散金氧半場效電晶體(RF LDMOS)元件的特性，著重於p-body 區和n-well drift區濃度變化與電性參數的關係，進行一般直流分析、S參數與功率參數的量測，並呈現不同汲極區長度元件與重要參數的量測結果和熱效應對於元件特性的影響程度，透過研究量測結果來獲得最佳化的製程參數。
在直流分析上，主要參數包含轉導、導通電阻和崩潰電壓，同時觀察RF LDMOS電容效應的特殊曲線，並且使用TCAD軟體模擬元件發生impact ionization位置的偏移與閘極偏壓之關係 。高頻參數中分析截止頻率與最大震盪頻率隨著佈植濃度改變的趨勢，針對重要參數作深入探討。而透過使用load pull量測two tone方法獲得功率參數，並且對於高頻參數和功率參數作熱效應的研究，藉由這些實驗結果，可以作為提供以後設計LDMOS的參考，給予製程上的一個設計準則。

關鍵字

橫向擴散 ； 離子佈植 ； 截止頻率 ； 最大震盪頻率

並列摘要

We investigated RF LDMOS performances with various p-body and drift region implant doses in this thesis. DC, S-parameter and power characteristics were measured and analyzed. In addition, we present the relationship between the drain length and the electrical parameters. The analyses of the thermal effects on device characteristics were also demonstrated. Therefore, we can acquire the optimum device process parameters based on our research results.
In DC characteristics, the main parameters, such as the transconductance, on-resistance, and breakdown voltage were analyzed. Moreover, we observed the unusual curve of the RF LDMOS capacitances and analyzed the trends of cutoff frequency and maximum oscillation frequency with various implant doses. The power and linearity parameters obtained from the load pull system using two tone method were also investigated. These experimental results can provide a guideline for RF LDMOS design and fabrication in the future.

並列關鍵字

Lateral Diffused ； ion implantation ； cutoff frequency ； maximum oscillation frequency

參考文獻

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