微波熱處理對氣膠電漿鍍膜法製備鋯鈦酸鉛Pb(Zr0.52Ti0.48)O3厚膜之影響

The Effects of Microwave Annealing on the PZT Thick Films Deposited by Aerosol Plasma Deposition Method

黃俊銘(Chun-Ming Huang)

指導教授 ： 王錫福 ； 彭成鑑

國立臺北科技大學/工程學院/材料及資源工程系所/碩士(2005年)

https://doi.org/10.6841/NTUT.2005.00149

摘要

本實驗利用氣膠電漿沉積法新型技術在低溫下（＜200oC）成功將鋯鈦酸鉛厚膜沈積白金底電極上。在經過不同微波功率的熱處理後，探討微波熱處理對PZT厚膜的相組成成份及介電性質、鐵電特性、微結構之影響探討。
從實驗結果得知，利用氣膠電漿沉積法將PZT 厚膜沈積白金底電極後，經微波熱處理（200W、400W、600W、800W）/3min後，由XRD中可得，微波熱處理200W、400W皆會使PZT厚膜中產生大量的焦綠石相而造成鐵電性質不佳，但將微波功率增加到800W後，焦綠石相會減少；依微結構觀察得知經由微波熱處理後，PZT厚膜會變的更加緻密且其緻密度會達到99%以上；在介電性質方面；當測試頻率固定在100KHz時，介電常數及介電損耗分別為223和0.034(無熱處理)；在利用微波200W/3min，其介電性質與介電損耗分別為116.02和0.025，在利用微波400W/3min進行熱處理後，其介電性質與介電損耗分別為181.49和0.037，在利用微波600W/3min (溫度約~150℃)和800W/3min (溫度約400℃)進行熱處理後，其介電常數及介電損耗分別為729.92,1050.06和0.024,0.027；PZT厚膜在經微波800W退火3min後，其Pr值更可高達32.87μC/cm2；更加證實利用微波熱處理的方式可在低溫下得到一般製程要經高溫退火的效果，且由XRD分析結果可得相當穩定的組成成分；由TEM微結構分析可知未熱處理之PZT厚膜中有Perovskite PZT相、PbO相及非晶質相的區域存在， 由SADP中可得知PZT晶粒為隨機排列並無優選方向。經微波熱處理600W/3Min之PZT厚膜中有Perovskite PZT相、Pyrochlore相、PbO相及非晶質相的區域存在， 由SADP中可得知PZT晶粒為隨機排列並無優選方向。經微波熱處理800W/3Min之PZT厚膜中有Perovskite PZT相、Pyrochlore相（較少量）、PbO相及非晶質相的區域存在， 由SADP中可得知PZT晶粒為隨機排列並無優選方向，經由TEM微結構圖計算出未熱處理、微波熱處理600W/3Min及微波熱處理800W/3Min後之Perovskite PZT相與非晶質相的區域比例關係分別為40~50%、70~80%及80~90%，由此可知Perovskite PZT相的增加，應是使介電性質提升的主因之一。

關鍵字

鐵電厚膜 ； 微波退火 ； PZT ； 氣膠電漿沉積 ； Pyrochlore

並列摘要

APD method was used to deposit PZT thick films on the platinum electrode at low temperature (< 200 oC) successfully. After annealing by different microwave power, the effects of microwave annealing on the phase formation, microstructure and dielectric properties of PZT thick films were discussed. From XRD analysis, it indicated that the PZT thick films produce lots of pyrochlore phases after microwave annealing at 200W and 400W for 3 minutes. Increasing the microwave power up to 800W, pyrochlore phase decreases. Without heat treatment , the dielectric constant and dielectric loss are 223, and 0.034 measured 100KHz. After microwave heat treatment at 800W for 3 minutes, the dielectric constant and dielectric loss are 1050 and 0.027. The Pr value would be 32.87μC/cm2 after PZT thick films heated treatments 800W for 3 minutes. From the TEM results, they show that PZT phases, PbO phases, and amorphous phase area existed in PZT thick films before heat treatments. After microwave 600W of heat treatment for 3 minutes, Perovskite PZT phases, pyrochlore phases (less quantity), PbO phases, and amorphous areas existing in PZT thick films.

並列關鍵字

ferroelectric thick film ； PZT ； aerosol deposition ； Microwave annealed ； Pyrochlore

參考文獻

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