熱退火與電漿處理對氧化鋅鋁-氧化石墨烯薄膜特性的影響

Effects of annealing and plasma treatments on AZO-GO thin films

林保銘(Pao-Ming Lin)

指導教授 ： 許經夌

中原大學/理學院/物理研究所/碩士(2019年)

https://doi.org/10.6840/cycu201900118

摘要

本研究使用溶膠凝膠法去製備氧化鋅鋁 (AZO)、氧化鋅鋁-氧化石墨烯 (AZO-GO) 前驅溶液，旋轉塗佈後以熱退火方式於石英基板上成膜。以原子力顯微鏡 (AFM) 去掃描薄膜的表面形貌，以X-ray繞射儀分析其晶格結構，透過拉曼光譜去檢測石墨烯的存在。薄膜能隙與缺陷以光致螢光光譜量測，以霍爾量測系統分析其材料之電性。以AFM掃描出的形貌指出，不同電漿處理時間與薄膜中還原氧化石墨烯其表面。X-ray繞射分析中，薄膜需經熱退火的過程，才能使薄膜具晶相，晶相皆呈現纖鋅礦結構，為多晶結構，隨著電漿處理時間的增加，其繞射峰強度會變弱。在拉曼光譜中顯示出還原石墨烯 (rGO) 的存在。光致螢光光譜中可以證明材料的能隙發光較強，而透過氫氬混合電漿處理後，近能隙發光變得更加顯著。在霍爾量測中，發現還原氧化石墨烯對於AZO薄膜的電性有所改善，再藉由電漿處理，令薄膜在導電性更進一步的得到提升。

關鍵字

氧化鋅 ； 石墨烯 ； 電漿處理 ； 霍爾效應

並列摘要

In this study, the sol-gel method was used to synthesize AZO (Al-doped ZnO) and AZO-GO (graphene oxide) precursor solutions. The solutions were then spin-coated on quartz substrates to form the thin films. The surface morphology and crystal structure of the thin films were obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD). Raman spectroscopy was used to discover the presence of reduced graphene oxide (rGO). The photoluminescence (PL) spectroscopy reveals the energy gap and defects of the thin films. The electronic properties of the thin films were measured by the Hall effect measurement. The results show that the reduced graphene oxide and the different plasma treatment time have non-significant influence for the surface morphology. In X-ray diffraction analysis, the crystallites appear for the thin films annealed at higher temperatures. The structure is poly-crystal for wurtzite of non-polar. Intensity diffraction peaks decrease as the plasma treatment time increases. By Raman spectroscopy, reduced graphene oxides exist on the thin films. We used PL spectroscopy to find that the near band edge emission is strong. The intensity is enhanced by the H2/Ar plasma treatment. In the Hall effect measurement, the electrically conductive properties have improved enormously by the addition of the rGO and the H2/Ar plasma treatment.

並列關鍵字

ZnO ； Graphene ； plasma treatment ； Hall effect

參考文獻

[1] Hirao T, Furuta M, Hiramatsu T, Matsuda T, Li C, Furuta H, et al. Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs. IEEE Transactions on Electron Devices. 2008;55:3136-42.

[2] Sessolo M, Bolink HJ. Hybrid organic–inorganic light‐emitting diodes. Advanced Materials. 2011;23:1829-45.

[3] Faria JC, Campbell AJ, McLachlan MA. ZnO nanorod arrays as electron injection layers for efficient organic light emitting diodes. Advanced Functional Materials. 2015;25:4657-63.

[4] Lv J, Gong W, Huang K, Zhu J, Meng F, Song X, et al. Effect of annealing temperature on photocatalytic activity of ZnO thin films prepared by sol–gel method. Superlattices and Microstructures. 2011;50:98-106.

[5] Bashir A, Wöbkenberg PH, Smith J, Ball JM, Adamopoulos G, Bradley DD, et al. High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere. Advanced Materials. 2009;21:2226-31.