封閉式磁控直流濺鍍氮化鈦鉻薄膜之磨潤性能

The tribological performance of TiCrN films deposite by closed field magnetron DC sputtering

鄧兆廷(Jau-Ting Teng)

指導教授 ： 高木榮

國立臺北科技大學/機電學院/車輛工程系所/碩士(2012年)

摘要

本研究利用封閉式磁控直流濺鍍系統，以不同鈦鈀及鉻鈀功率將TiCrN鍍膜披覆於SUJ-2軸承鋼上，探討不同鈦含量對於氮化鉻鍍膜性質之影響。在薄膜特性，首先以EDS分析鍍膜成分，SEM以及XRD分析微結構，以維氏硬度儀量測鍍膜之硬度，以洛式壓痕儀檢測其膜之附著性，以Pin-on-disk磨耗試驗機研究其膜之磨潤性能。
本研究結果顯示，TiCrN鍍膜隨著鈦鈀及鉻鈀功率由(Cr:800W，Ti:600W)轉變為(Cr:500W，Ti:800W)，鈦含量將由10.82at%增加至26.59%，隨著鈦含量增加，薄膜結晶將變小且更加細緻。當TiCrN鍍膜在鈦鈀功率800W、鉻鈀功率500W、氬氣流量30sccm、氮氣流量30sccm、基板偏壓50W、經過400度熱處理硬度可達Hv150kg734。最後在5kg、4kg、3kg、2kg荷重試驗條件之pin-on disk磨耗試驗中，在鈦含量26.59%TiCrN-2薄膜有最低摩擦係數。

關鍵字

封閉式磁控直流濺鍍系統 ； 氮化鉻 ； 氮化鈦鉻 ； 磨潤性能

並列摘要

In this study, TiCrN coatings were deposited on SUJ-2 substrate surface from titanium and chromium targets using the closed field magnetron sputtering system. These TiCrN coatings were prepared at various power of titanium and chromium targets. The microstructure of the coatings was analyzed by scanning electron microscopy (SEM) and X-ray Diffraction. EDS was used to measure the composition inside the coatings. The hardness have been characterized by Vickers hardness test machine. Adhesion of coatings to the substrate was assessed using Rockwell hardness test machine. Afterwards the tribological performance of the coatings were tested by pin-on-disk wear apparatus.
The experiment results are shown as following: the contents of Ti increase from 10.82 at.% to 26.59 at.% when changing the power of titanium and chromium targets(form Cr:800W,Ti:600W to Cr:500W,Ti:800W).The grain size has been become smaller and more compact with increasing Ti dopant concentration. Inhibition of Hv150kg of TiCrN coatings at 800W titanium, 500W chromium target power, 30sccm nigrogen flux, 30sccm argon flux and 50W bias with 400° heat treatment is the highest hardness. Finally, difference of experimental conditions by pin-on-disk wear apparatus has the lowest friction coefficient of TiCrN-2 coatings with Ti contents 26.59 at.%.

並列關鍵字

closed field magnetron DC sputtering ； TiCrN ； CrN ； tribological performance

參考文獻

[1]O.I. Zhupanska International Journal of Engineering Science, Volume 49, Issue 7, July 2011, 576-588

[4]W.R. Grove, “On Some Phenomena of the Voltaic Discharge”, The Philosophical Magazine, 16 1840.pp.478-482

[5]B.Chapman, “ Glow Discharge processes-Sputtering and Plasma Etching”, John Wiley & Sons, Canada 1980.

[8]C. S. McCormick, C. E. Weber, and J. R. Abelson,“An amorphous thin film transistor fabricated at 125 by dc reactive magnetron sputtering”, Applied physics lett. 70 (2), 226 (1997).

[10]C. S. McCormick, C. E. Weber, and J. R. Abelson,“An amorphous thin film transistor fabricated at 125 by dc reactive magnetron sputtering”, Applied physics lett. 70 (2), 226 (1997).