本研究利用Sol-Gel法製備Mg2SiO4:Eu3+螢光體,探討在不同的製程參數下對其微結構與光激發光特性之影響。另外再以固態反應法合成一組試樣做為比對組,以了解Sol-Gel法製備的特徵。 結果顯示在燒成溫度方面,溶膠凝膠法在燒成溫度1000℃時即可合成Mg2SiO4,傳統固態反應法燒成溫度則需在1300℃,相比之下大幅降低燒成溫度。比較螢光體粒徑,以溶膠凝膠法合成Mg2SiO4螢光體平均粒徑為100nm小於固態反應法的100μm。另外,Mg2SiO4:Eu3+螢光體以固態反應法及溶膠凝膠法燒成所得到光激發光特性則是相當接近,最強吸收特性峰值皆為395nm,分別以395nm波長激發,溶膠凝膠法的放射峰群為578nm(5D0→7F0)、583m、589nm、597nm (5D0→7F1)、614nm(5D0→7F2)、656nm(5D0→7F3)和703nm(5D0→7F4);固態反應法的放射峰群則為577nm(5D0→7F0)、591m、597nm(5D0→7F1)、612nm(5D0→7F2)、652nm(5D0→7F3)和702nm(5D0→7F4),產生躍遷的放射峰群皆為5D0à7F1、5D0à7F2、5D0à7F3、5D0à7F4等,屬於紅光範圍,其中以5D0à7F2為較強的放射,是為主波峰。
The research is attempted to synthesize Mg2SiO4:Eu3+ phosphors by using sol-gel method. Study several controlling factors that could affect the phosphor’s luminescence characteristics, such as firing temperature, firing time, doped with different amounts of the activator. In addition, our studying used solid reaction method to prepare Mg2SiO4:Eu3+ phosphors to make a comparison with the result of phosphors which were prepared by sol-gel method. The results appeared that the firing temperature for synthesizing Mg2SiO4 phosphor was found to be 1000℃ via sol-gel route as compared to 1300℃ used for solid-state route, we can observe obviously that we can reduce the firing temperature of phosphors by using sol-gel method. The average particle size of Mg2SiO4:Eu3+ phosphors which were prepared by using sol-gel method is 100nm which is much small than the phosphors which were prepared by solid state method. Besides, we could find that the phosphors which prepared by both sol-gel method and solid reaction method, the luminescence characteristics are quite similar. According to the results, we could observe that intensity of emission spectrums would both trend to increase when the molar fraction of Eu3+ was enhanced. They both obtained the strongest absorption peak at 395nm, and the emission spectrum excited by 395nm wavelength, they showed red light wavelength range that were correspond to 5D0→ 7F0, 5D0→ 7F1, 5D0→ 7F2, 5D0→ 7F3 and 5D0→ 7F4 transitions, respectively.