化學機械研磨,在半導體製程中是唯一可以達到晶圓全面平坦化效果的一項技術,在線寬越來越小的情況下,化學機械研磨技術也就日益被重視。 鑽石修整器,是化學機械研磨的主要耗材之一,鑽石碟的使用壽命也是影響著製程的穩定性以及良率等的主要因素,由於鑽石修整器是直接作用在研磨墊上面,因此半導體廠會在不影響製程穩定之下想辦法延長耗材使用壽命以降低生產成本。 本實驗先挑選不同平坦度,切削率以及鑽石露出度的鑽石修整器來確認在晶圓研磨率、均勻性、以及缺陷上的表現,最後分析研磨墊表面粗糙度以及被修整之後之厚度並分析與晶圓移除率之間的相關性。 本研究結果顯示無論是降低鑽石修整器轉速或是壓力均可有效降低研磨墊被移除的厚度,而修整器在使用前經過磨合也能穩定研磨效果,而平坦度較佳之鑽石修整器也能獲得穩定的晶圓研磨率以及延長使用壽命,最後經由實驗設計法結果可以得知壓力參數對於研磨率有顯著的影響。
Chemical Mechanical Polishing (CMP) is the most important method to reach global planarization in wafer fabrication. As the feature size shrinks gradually, the technology of CMP will be essential for advanced semiconductor process. The diamond disk is main consumable parts in CMP and the disk life time is key factor to affect process stability and wafer yield. Therefore, Semiconductor Company always tries to extend life time of consumable parts and maintain stable process to reduce cost of ownership. In this experiment, three major operation parameters, the flatness, cutting rate and diamond protrusion of diamond disk are used to evaluate the performance of wafer removal rate, non uniformity and defectivity. Finally, pad roughness and remaining thickness were tried to correlate with the wafer remove rate and characteristics of pad. The results of experiment show that the reduction of disk rotation speed or down force helped to save the pad thickness and to break-in diamond disk is helpfully for stabilize polishing performance. Base on the design of experiment result the disk down force has great impact on wafer remove rate.