在積體電路製程中,常常需要在晶圓上做出細微尺寸的圖案,而在這些圖案的形成方式,乃是使用蝕刻技術,將微影技術所產生的光阻圖案,忠實無誤的轉移到光阻底下的材質上;所謂的蝕刻技術,包含了所有將材質整面均勻移除,或是有圖案的選擇性部分去除之技術。而電漿蝕刻製程目前廣泛運用於半導體元件製作上,而電漿蝕刻製程中,有許多重要指標可決定機台之特性,如蝕刻率、均勻性、選擇性…等等。 在線寬越縮越小的情況下,操作範圍(Process window) 也就更顯得重要,但因機台參數之設定通常是由技術轉移或是製程工程師之經驗而獲得,有時候並非於最佳條件下操作,故尋找製程條件最佳化也相形重要。 接觸孔蝕刻主要為蝕刻金屬層間之介電質層,以連接兩層之金屬。而蝕刻輪廓(Etch Profile)為此製程之重要特徵之一,它會影響接下來的沉積製程,一般是用掃描式電子顯微鏡來檢視蝕刻輪廓。 本實驗選擇四個主要的機台操作參數,利用實驗計畫法作為本實驗之實驗方法;並討論在不同機台操作參數下所造成之影響,進而求得最佳化之製程條件。
In the integrated circuit process, small dimension pattern often needs to be formed on the wafer. The formative method of the pattern is to use the etchant to remove the exposure photo resist so that pattern can be directly transfer to red wafer. Etching method is the technology that removal all area or the selective region. Plasma etching process has been applied to the fabrication of semiconducting device widely. Some important index such as etching rate, uniformity, selectivity can determine the characteristic in the plasma etching process. As the pattern dimension shrinks gradually, the process windows for product fabrication become more important. The operating parameters of the instrument are varied form different makers. Therefore, looking for optimum operation condition is an important job for process engineers. In this experiment, four major operation parameter of machine will be chosen and designed of experiments is used for. This experiment will discuss the effects of different operation parameters and try to look for the optimum condition of process.