利用聚電解質製備ZnO/二氧化鈦複合材料及其應用

複合材料在工業上的應用非常廣泛，因此類性的材料會保持著各組分材料的特性且具有組成分間協調作用所產生的綜合性能。氧化鋅為一種寬頻隙半導體材料，擁有高的電子束縛能量，並且有吸收紫外光之能力。但是由於氧化鋅是兩性物質，無法在強酸或強鹼的環境下存在，所以我們就利用二氧化鈦的特性來合成核殼結構，使氧化鋅可以在強酸或強鹼中並保有其原本的特性。本研究首先先利用溶膠凝膠法合成奈米氧化鋅粉末，接著使用三種不同的方法來合成氧化鋅/二氧化鈦的奈米複合材料。(1)利用溶膠凝膠法配合二氧化鈦前驅物合成氧化鋅/二氧化鈦的奈米複合材料；(2)利用聚電解質改變氧化鋅粉體表面電位，使二氧化鈦披覆在氧化鋅表面，形成氧化鋅/二氧化鈦的奈米複合材料。(3)以聚電解質及二氧化鈦前驅物透過溶膠凝膠法合成氧化鋅/二氧化鈦的奈米複合材料。結果顯示，此三種不同方式製備氧化鋅/二氧化鈦的奈米複合材料皆具有良好的批覆性，並得知方法(3)較方法(1)縮短約一半的反應時間，方法(2)利用聚電解質改變電位後可以快速的獲得以物理吸附的氧化鋅/二氧化鈦的奈米複合材料。

關鍵字

氧化鋅；二氧化鈦；聚電解質；複合材料

並列摘要

Composite materials have been attracting in industry and sciential research.Because this composition is not only maintaining the original chemistry characteristics for the materials, but also promoting more ability. Zinc oxid (ZnO) has several unique characteristics such as wide band gap, high electron binding energy, and good UV-resistance. Although ZnO can apply to variety fields, it is not suitable for operation in aqueous process with extreme pH due to amp-hoteric. Therefore, we synthesized ZnO/TiO2 core-shell structure to make ZnO which can maintain its original chemistry characteristics and operate with extreme pH. In this study, we synthesized the ZnO/TiO2 core-shell structure by the three kinds of methods. (1) synthesis of the ZnO/TiO2 by sol-gel method with ZnO nanoparticles and precursor of Ti (2) synthesis of the ZnO/TiO2 by polyelectrolyte with ZnO and TiO2 nanoparticles (3) synthesis of the ZnO/TiO2 by combining polyelectrolyte and sol-gel method with ZnO nano- particles and precursor of Ti. From the results, the ZnO/TiO2 core-shell structures could be synthesized successfully by this three kinds of methods and we discovered that the time of synthesis for method (3) was faster than method (1) .

並列關鍵字

ZnO ； TiO2 ； polyelectrolyte ； composite materials

參考文獻

1. P.Alivisatos, A., Semiconductor clnsters,Nanocrystals,and Quantum Dots. JSTOR, 1996. 271: p. 933-937.

2. H. Kohjiro,K. Tohru ,S.Kazuhiro,S. Hideki, A.Hironori, Highly effcient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells. Solar Energy Materials & Solar Cells, 2000(115-134).

3. Y.Chen, H. Koh, K. Park, K. Hiraga, Z.Zhu, and T. Yao, Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire:Growth and characterization. Applied Physics, 1998.

4. D.C.Look, , Recent advances in ZnO materials and devices. Materials Science and Engineering, 2001. B80 p. 383-387.

5. A. Tsukazaki ,T. Onuma , M. Ohtani , T.Makino, M. Sumiya , K. Ohtani Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nature Materials, 2005 4(1): p. 42-46.

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利用聚電解質製備ZnO/二氧化鈦複合材料及其應用

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