方位角掃描技術沉積鋁奈米柱陣列

Sculptured aluminum nanorod arrays fabricated by phisweep technique

吳宗翰(Tsung-Han Wu)

指導教授 ： 任貽均

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2014年)

摘要

本論文利用斜向沉積技術配合方位角掃描技術製鍍非均向性鋁奈米斜柱陣列薄膜，基板隨著垂直於基板法線方向來回擺動藉此影響自我遮蔽效應的方向性，來改善斜柱結構在垂直沉積平面方向所發生的扇形擴張現象，由於基板擺動的引入使得沉積角不再同時決定了孔隙率和柱狀傾角。而蒸鍍材料入射方向與基板擺動方向之間的幾何關係以向量分析做拆解，得到了等效柱狀傾角為沉積角和基板轉動的掃瞄角的數學關係，所以藉著沉積角與基板轉動的掃瞄角度兩者的搭配能設計出不同的非均向性薄膜。本研究中發現方位角掃描技術對於單一鋁斜柱的直徑以及整體膜層的孔隙率有所影響，而金屬材料比起介電質材料更須選定掃瞄角才會改善扇形擴張的現象。

關鍵字

鋁 ； 奈米柱陣列 ； 斜向沉積技術 ； 方位角掃描技術

並列摘要

This study is based on the use of glancing angle deposition technique(GLAD) and phisweep technique to plate anisotropy aluminum nanorod arrays. In the GLAD method, the substrate can be rotated about two axes: the α-axis in the plane of the substrate,and the φ-axis normal to the substrate. In traditional GLAD, the substrate is kept still during the growth of a linear slanted post segment; whereas, in PhiSweep GLAD, the substrate is swept back and forth around the φ-axis. The porosity and tilt column angle of an nanorod array can be tuned by introducing both deposition angle and sweep angle. Compared with dielectric materials, metal nanorod arrays require less sweep angle to reach the fan-out improvement. The morphology of metal nanorod arrays affected by phisweep technique is also discussed in this work.

並列關鍵字

aluminum ； nanorods array ； glancing angle deposition technique ； phisweep technique

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