酸蝕刻製程對太陽電池發電效率之研究

Research of Acid Etching to Generation Electricity Efficiency of Solar Cell

楊幸福(Hsing-Fu Yang)

指導教授 ： 段葉芳

國立臺北科技大學/工程學院/化學工程研究所/碩士(2007年)

摘要

本論文乃研究結晶矽太陽電池之蝕刻技術。逆金字塔結構為相當好之光封存結構，一般業界常將p 型晶格排列(100)之矽晶片，利用KOH鹼蝕刻之異向性蝕刻特性將矽晶片蝕刻成晶格排列(111)逆金字塔結構。因為酸蝕刻有等向性、局部平坦化能力，所以本研究則是將矽晶片以HF與HNO3之混合酸來蝕刻，將Si以HNO3變成SiO2，再以HF溶解蝕刻。將HF與HNO3之混合比改變，利用矽晶片侵蝕速度因結晶面方位不同之特性，將矽晶片表面形成凹凸之金字塔狀。並討論蝕刻深度對於提升太陽電池效率之影響。
結果顯示，蝕刻深度確實對太陽電池效率有著重大的影響。好的參數可以大大的提升太陽電池效率。由實驗數據得知，蝕刻深度並非由我們想像的越深越好，單晶蝕刻深度在4.2μm最佳，多晶蝕刻深度在4.6μm最佳。

關鍵字

太陽電池 ； 酸蝕刻率 ； 蝕刻深度 ； 等向性蝕刻

並列摘要

This paper is making a study of poly-crystalline silicon solar cell process and technique. The inverted pyramids are fairly good structure for sealing light. The inverted pyramids are etched by KOH solution for anisotropic etching. Because the acid etching has isotropic and smooth capability, so this research is comes Si the wafer mixed acid of by HF and HNO3 the etching, use the HNO3 turns Si to SiO2, again by HF dissolution etching. Mixture ratio of change the HF and the HNO3, the use Si wafer invades the food speed because crystal conformation the position different characteristic, Si the wafer surface will form the pyramid shape to be concave-convex. And to discuss influence of the discussion etching depth regarding promotes influence the solar cell efficiency.
The result showed that, the etching depth truly has the significant influence to the solar cell efficiency. The good parameter may eventful the solar cell efficiency. Knew by the empirical datum that, the etching depth imagines by no means by us deeply better,
single-crystalline etching depth in 4.2 um is best, the poly-crystalline etching depth is best in 4.6 um.

並列關鍵字

poly-crystalline silicon solar cell ； Etching depth ； isotropic etching

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