銻掺入對脈衝雷射蒸鍍法成長之氧化錳鋅薄膜特性的影響

Effects of Sb incorporation on the properties of the ZnMnO films synthesized by pulsed laser deposition

洪培耕(Pei-Geng Hung)

指導教授 ： 洪魏寬

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2012年)

摘要

本研究中我們探討緩衝層與銻掺入對脈衝雷射蒸鍍法成長之氧化錳鋅(ZnMnO)薄膜特性的影響。關於緩衝層對ZnMnO影響的部份，由X-ray繞射圖譜顯示，成長ZnO緩衝層會提高ZnMnO薄膜中Mn的溶解度，結晶品質變好。我們分別成長了不同膜厚之緩衝層(0nm,25nm,50nm,75nm,100nm)，其中50nm之緩衝層之Mn掺入效率最好。而關於銻的掺入對ZnMnO薄膜影響的部份，由X-ray繞射圖譜與穿透光譜觀察到Sb的掺入導致ZnMnO薄膜中Mn摻雜濃度降低且減緩了ZnMnO薄膜能隙往高能量移動的速度。此外，我們從PL光譜中發現Sb的少量掺入，會使得ZnMnO薄膜(靶材Mn濃度從X=0.01到0.06)室溫下皆可觀測到發光峰值並有效提升發光效率，隨著Mn掺雜濃度的提升，峰值有藍移的現象。

關鍵字

脈衝雷射蒸鍍 ； 氧化錳鋅 ； 氧化鋅 ； 錳摻雜 ； 銻摻雜

並列摘要

The effects of the ZnO buffer layer and the Sb incorporation on the ZnMnO thin films grown on c-plane sapphire by the pulsed laser deposition were investigated. For the effects of the buffer layer, we found that the substituting Mn concentration and the crystalline quality of the ZnMnO films were strongly correlated with the thickness of the buffer layer. For the effects of the Sb incorporation, the results from x-ray diffraction and optical transmission spectra measurements indicated that the existence of Sb would lower the substituting Mn content. Furthermore, photoluminescence measurements showed that a very small amount of Sb incorporation would enhance the emission efficiency of the ZnMnO films. Band-edge emissions from Zn1-xMnxO films at room temperature were observed for x = 0.01 to 0.06

並列關鍵字

PLD ； ZnO ； ZnMnO ； Sb doped ZnMnO ； Mn doped ZnO

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