高功率、高效率及高線性度功率放大器與開關之設計

隨著無線通訊快速的發展，在無線通訊方面的應用也得到快速的發展。射頻功率放大器是無線通訊系統中一個關鍵的元件，因為它在射頻收發機中消耗了超過一半的能量。此外，功率放大器的輸出功率決定通訊距離的遠近，功率附加效率決定了功率消耗的程度也就是裝置使用的時間。在高效率功率放大器的範圍內，Doherty放大器除了架構簡單外，還具備了較大範圍內的高效率，本論文中第一部份採用E類功率放大器作為基本組態來設計高效率的功率放大器。為了方便說明，本電路的基本架構是由主放大器及輔助放大器組成。在Doherty架構中最後輸出功率是分別由兩路的放大器所結合。在主放大器的輸出端有串聯一條傳輸線用來作為阻抗轉換的用途，而在輔助放大器的輸入端有另一條傳輸線用來使相位同步，補償主放大器輸出端串聯傳輸線的相位。最後，在主放大器與輔助放大器的輸入端利用威爾金森功率分配器連結以便可以分離訊號同時維持很好的隔離度，本電路的實現是利用TSMC 0.35um 3P3M SiGe BiCMOS製程。第二部份為一個單刀六擲射頻開關的設計，目前在商用射頻開關的產品因為無線通訊規範逐漸需要同時多頻段操作，不僅在特性上有嚴格要求，例如:體積小、低成本、低控制電壓等，在這裡我們利用WIN 0.15um pHEMT 製程設計一個可以符合商用規格的開關。

關鍵字

Doherty功率放大器； E類功率放大器；射頻開關

並列摘要

As the rapid development of mobile communication, many applications make use of wireless communication to carry their works out. The radio frequency power amplifier is a key component for wireless communication systems. Since it consumed the power more than half of entire device. Moreover, the output power will decide the communication distance, power added efficiency will decide the degree of the power consumption, i.e., the idle time of the device. In the applications of high efficiency power amplifier, the Doherty power amplifier not only has a simple structure but also has a wide range of efficiency. In the thesis, the first section, we choose the class e to be a basic structure in order to approach high efficiency power amplifier. The basic configuration, for discussion convenience, is composed of the two power devices are termed “main” and “auxiliary” amplifiers. In the Doherty amplifier architecture, the final output power is the combination of the individual output power of the two devices. There is a transmission line at the output of the main amplifier for impedance transformation, and the other transmission line at the input of the auxiliary amplifier for the purpose of phase coherent, it’s used to compensate for the phase caused by transmission line at the output of the main amplifier. Finally, the Wilkinson power divider has been used at the input of the Doherty amplifier to split the input signal with good isolation. The implementation of the designed circuit is based on TSMC 0.35 um 3P3M SiGe BiCMOS process. The second section is a design of single pole six throw RF switch. Current commercial RF switch products not only demand good performances but small size, low cost and low voltage control as the number of wireless standards integrated in a single application increases. This section we use WIN 0.15um pHEMT process to design a RF switch for commercial products which can meet the specifications as well as needs required in the wireless market.

並列關鍵字

Doherty power amplifier ； Class E power amplifier ； RF switch

參考文獻

[3]JinSung Choi et al., “Power Amplifiers and Transmitters for Next Generation Mobile Handsets,” Journal of Semiconductor Technology and Science, vol. 9, no. 4, pp. 14-23, Dec. 2009.

[5]M. Nick and A. Mortazawi, “A Doherty power amplifier with extended resonance power divider for linearity improvement,” in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 2008, pp. 423-426.

[6]X. cui, P. Roblin, J. Lee, W. R. Liou, and Y. G. Kim, “A 3.5 GHz CMOS Doherty power amplifier with integrated diode linearizer targeted for WiMax applications,” in IEEE Circuits and Systems Symp., Aug. 2007, pp. 465-468.

[7]C. Koo, U. Kim, J. Jeon, J. Kim, and Y. Kwon, “A Linearity-Enhanced Compact Series-Type Doherty Amplifier Suitable for CDMA Handset Applications,” in IEEE Radio and Wireless Symp., Jan. 2007, pp. 317-320.

[8]Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design, 2nd ed., Prentice Hall, 1996.

國際替代計量

高功率、高效率及高線性度功率放大器與開關之設計

未授權

主題瀏覽