錫銦銲料與銅基材的界面反應之研究

The Effect of Different In Content on Interfacial Reactions and Growth Kinetics between Sn-In Solders and Cu Substrate

楊岱儒(Dai-Ru Yang)

指導教授 ： 黃孟槺

國立臺北科技大學/工程學院/化學工程研究所/碩士(2009年)

https://doi.org/10.6841/NTUT.2009.00471

摘要

本研究旨在探討錫銦銲料與銅基材在不同實驗條件下之液/固擴散反應的成長動力機構。主要的實驗參數包括銦的含量（0、20、40、60、80 at.%）、反應溫度（260、285、305、315℃）與反應時間（5、10、20、40、80、160、320分鐘）等三項。
藉由電子探針微測儀(EPMA)半定量出不同含銦量之銲錫與銅的接點，再參考250℃的三元等溫平衡相圖，顯示含銦20、40、60、80 at.%銲料的接點，會有常見的合金Cu6(Sn,In)5、Cu3(Sn,In)生成，但20 at.%的銲料則並無觀察到介穩相-Cu(In,Sn)2。這些IMCs層的厚度都會隨著反應時間與反應溫度增加而增長。
由錫/銅系統之IMCs層的厚度(d)與時間(t)雙對數的圖中可知，在溫度260到305℃之間，由各不同溫度的斜率得到了ㄧ個平均時間指數( )為0.315。由於這時間指數( )約為0.3，這表示了純錫與銅基材間所形成的IMCs之成長速率會被晶界擴散(grain boundary diffusion)機構所控制，其視活化能(apparent activation energy, )為109.92 kJ/mol.；對於Sn-20 at.%銦含量的錫銦銲料與銅所形成的IMCs而言，在溫度285到315℃間的平均時間指數( )為0.502，而Sn-40 at.%銦含量的錫銦銲料與銅所形成的IMCs，在溫度260到315℃間的平均時間指數( )則為0.515。由於20 at.% 銦含量的錫銦合金以及40 at.% 銦含量的錫銦合金與銅生成IMCs的時間指數( )大約是0.5，這表示此二系統的IMCs生長速率皆會被體擴散(volume diffusion)機構所控制，其視活化能( )分別為95.28與123.57 kJ/mol.。

關鍵字

成長動力機構 ； 界金屬化合物 ； 錫銦化合物 ； 銅基材

並列摘要

The purpose of this study is to investigate the growth kinetic mechanism of intermetallic compound(IMC) formed by Sn-In solder and Cu substrate under a combination of three parameters: indium contents (0, 20, 40, 60, and 80 at.%); reaction temperature (260, 285, 305 and 315℃), and reaction time (5,10,20, 40 80, 160 and 320 minutes).

The IMCs were composed of two or three phases, which could be identified by using Electron Probe Micro-Analyzer (EPMA) and compare the data with the 250℃ isothermal section of the Sn–In–Cu ternary system. All of the IMCs formed at the interface between Cu and Sn-In contain the common alloy of Cu6(Sn,In)5 and Cu3(Sn,In) no matter the content of In is 20, 40, 60 or 80 at.%. Also, the IMCs formed from the solder containing 40, 60, and 80 at.% of In would contain a metastable phase of Cu(In,Sn)2.

The thickness of these IMCs increased with the increasing aging temperature and time. From the logarithmic chart of IMC thickness (d) vs time (t) in the Sn /Cu system, we got a straight line to determine the time exponent of n about 0.3 in the range of 260 to 305℃. That explained the growth of the IMCs, formed by pure tin and Cu substrate was mainly controlled by the grain boundary diffusion mechanism and its apparent activation energy was calculated as 109.92 kJ/mol. As for the IMC formed by Sn-20 at.% In and Cu, the average of the time exponent of n was found to be 0.502 within the temperature of 285 to 315℃. For the IMC formed by Sn-40 at.% and Cu, the average of the time exponent n was found to be 0.515 within the same temperature range. Since the time exponent, , of Sn-20 at.%/ Cu and Sn-40 at.%/ Cu were about 0.5, the IMC growth pattern for both reaction system were controlled by the volume diffusion mechanism. The apparent activation energy was 95.28 kJ/mol and 123.57 kJ/mol for the In content of 20 and 40 at.%, respectively.

並列關鍵字

Growth kinetic mechanism ； Intermetallic compound ； Sn-In solder ； Cu substrate

參考文獻

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