超寬頻3.1至10.6 GHz之超平坦增益低雜訊放大器

A Super Gain-Flatness LNA for Ultra-Wideband from 3.1 to 10.6 GHz

沈秋龍(Chiu-Lung Shen)

指導教授 ： 呂振森 ； 宋國明

國立臺北科技大學/電資學院/電機工程系研究所/碩士(2008年)

摘要

本論文主要是利用台灣積體電路公司所提供的0.18μm製程元件模型設計出符合IEEE 802.15.3部份之接收機，首先針對超寬頻帶3.1 GHz至10.6 GHz低雜訊放大器做設計，進而延伸到超寬頻超平坦增益低雜訊放大器之設計，之後再以此顆放大器之缺點加以改進，並發展出多重閘極低雜訊放大器之設計工作，而主要的技術在於利用多重閘極電路將原本放大器之線性度提高。
超寬頻超平坦增益低雜訊放大器的模擬結果顯示，若操作電位為1.8伏特時，其消耗功率為13.09 mW、輸入返回損耗為-10.3 dB、輸出返回損耗為-13.4 dB、隔離度高達-78 dB、增益在11.8 dB 至 13.7 dB之間、增益平坦度為0.254、雜訊指數為4.1 dB至4.9 dB、在頻率6 GHz之P1dB為-11.77 dBm與在頻率6 GHz之IIP3為-13.22 dBm。
反觀超寬頻多重閘極低雜訊放大器的模擬結果指出，若操作電位為1.8伏特時，其消耗功率為12.2 mW、輸入返回損耗為-12.3 dB、輸出返回損耗為-11.1 dB、隔離度高達-83 dB、增益在11.5 dB 至 13.4 dB之間、增益平坦度為0.245、雜訊指數為3.8 dB至4.7 dB、在頻率6 GHz之P1dB為-11.25 dBm與在頻率6 GHz之IIP3為-12.28 dBm。

關鍵字

超寬頻 ； 增益平坦度 ； 低雜訊放大器 ； 射頻積體電路

並列摘要

In this thesis, we use the model of TSMC CMOS 0.18μm to design a simple receiver based on IEEE 802.15.3 specification. First of all, we design a LNA for ultra-wideband from 3.1 GHz to 10.6 GHz. Then we design a super gain-flatness low noise amplifier for ultra-wideband. Furthermore we improve this amplifier and design a multiple-gated low noise amplifier for ultra-wideband from 3.1 GHz to 10.6 GHz. The key technique is to improve its linearity.
The simulation results of the super gain-flatness low noise amplifier (LNA) show that the power consumption is 13.09mW, the input return loss is less than -10.3dB, the output return loss is less than -13.4dB and the isolation is less than -78, respectively. Besides the power gain is from 11.8 to 13.7dB and gain flatness is reduced to 0.254. The noise figure locates on the range of 4.1 dB to 4.9 dB with -3dB bandwidth of 3.1 GHz to 10.6 GHz. The simulated P1dB and IIP3 are -11.77 dBm and -13.22dBm at 6 GHz, respectively.
The simulation results of the multiple-gated low noise amplifier (LNA) show that the power consumption is 12.2mW, the input return loss is less than -12.3dB, the output return loss is less than -11.1dB and the isolation is less than -83, respectively. Besides, the power gain is from 11.5 dB to 13.4 dB and gain flatness is reduced to 0.245. The noise figure locates on the range of 3.8 dB to 4.7 dB with -3dB bandwidth of 3.1 GHz to 10.6 GHz. The simulated P1dB and IIP3 are -11.25 dBm and -13.28 dBm at 6 GHz, respectively.

並列關鍵字

Ultra-Wideband ； gain-flatness ； Low noise amplifier ； Radio frequency integrated circuit.

參考文獻

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