透過您的圖書館登入
IP:18.119.248.13
  • 學位論文

超低溫燒結Zn2Te3O8-TiTe3O8微波介電陶瓷

Ultra-low fire of Zn2Te3O8-TiTe3O8 Microwave Dielectric Ceramics

指導教授 : 王錫福 王玉瑞
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


TeO2化合物具有低溫燒結及良好的微波介電性質,但由於溫度係數過高難以實際應用。為改善其性質,本研究分為兩部分去做探討。 Zn2Te3O8陶瓷具有低溫燒結及高品質因子,然而其溫度係數約-37ppm/℃。因此添加正溫度係數之陶瓷材料來降低其溫度係數。本研究以固態反應法製備Zn2Te3O8陶瓷,添加不同比例的TiTe3O8和H3BO3。探討其緻密化行為,相組成,微結構及介電性質。當添加30wt%的TiTe3O8,介電常數提升、品質因子略微下降,在燒結溫度600℃可得到最佳介電性質,介電常數~19.7、Qxf~50042GHz、共振頻率溫度係數~3 ppm/℃。 利用固態反應法合成Ta2Mo2O11陶瓷體,探討其緻密化行為,相組成、微結構及介電性質。結果顯示燒結溫度在750℃/2h時得到較佳之介電性質,介電常數~20.7、Qxf~8753GHz。

並列摘要


TeO2 compound possess a low sintered temperature and good microwave dielectric properties but with a high τf which cause the material fail to be applied. For improving the properties, its compounds Zn2Te3O8 and Ta2Mo2O11 are synthesized and studied. Zn2Te3O8 ceramic has a low sintered temperature and a high quality factor, however, it has a high temperature coefficient of approximately -37 ppm/℃. To lower the temperature coefficient, the materials TiTe3O8 and H3BO3 with positive τf-value was added into the Zn2Te3O8 ceramics and their densification behavior, phase conponents, microstructure and dielectric properties were investigated. The results show the TiTe3O8 additive could increase the dielectric constant, but the dielectric loss also increaseed, that cause the quality factor to drop, At the sintered temperature of 600°C the optimum microwave dielectric properties obtained were εr ~19.7, Q×f ~50042GHz, and τf ~3 ppm/℃. The study of Ta2Mo2O11 ceramics showed that the sample sintered at 750℃ for 2h has the dielectric properties: εr ~20.7, and Q×f ~8753GHz.

參考文獻


[8] 吳明忠,鋅鈮系無線通訊用低溫燒結微波介電材料之研究,碩士論文,國立台灣大學材料科學與工程學研究所,台北,2004。
[1] R. D. Richtmyer, "Dielectric Resonator," J. Appl. Phys, vol. 10, 1939 , pp. 391-398.
[4] Arthur von Hippel, Dielectric and Waves, New York: Wiley, vol. 96, 1957,
[5] H. Ocuchi and S. Kawashima, "Dielectric Ceramics for Microwave Application," Jpn.J, Appl. Phys, vol. 24, 1985, pp.60-64.
[11] D. Kajfez, "Computed Modal Field Distribution for Isolated Dielectric Resonators," IEEE. Trans. MTT, vol. 32, 1984, pp. 1609-1616.

延伸閱讀