以濺鍍法成長摻銻氧化鋅薄膜

Sb-doped P-type ZnO Thin Films Fabricated by RF Magnetron Sputtering

林瑞樺(Jui-Hua Lin)

指導教授 ： 王耀德

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2009年)

摘要

本論文利用RF磁控濺鍍系統與高溫爐熱退火架構去研製銻之摻雜氧化鋅(SZO)薄膜。薄膜之晶體結構與電性分別利用X-Ray繞射儀、SEM、AFM與霍爾量測儀器去量測。從XRD分析中發現，隨著摻雜濃度的提升， (002) PEAK會向低角度位移；而從霍爾量測分析中顯示，在溫度550℃濺鍍，接著於充滿氮氣的環境中以850℃退火10分鐘，可使濃度1.0at.% SZO薄膜形成p型半導體。此時電阻率、載子濃度與遷移率分別為2.19(Ω-cm)、5.62×1017(cm-3)、5.06(cm2/Vs)。因此，本實驗利用RF磁控濺鍍系統製作摻雜銻之氧化鋅薄膜，成功摻雜出具有良好電性、高載子濃度以及均勻性相當好的P行半導體薄膜。

關鍵字

RF磁控濺鍍法 ； p-type ZnO ； Sb-doped氧化鋅薄膜

並列摘要

We investigated the Sb-doping effects on ZnO thin films using RF (radio frequency) magnetron sputtering and post thermal annealing. The structural and electronic properties of the thin films were measured by X-ray diffraction, SEM (scanning electron microscope), Hall effect measurement, and AFM. Results of X-ray diffraction reveal that the Sb atoms were successfully occupied the zinc sites, and made the (002) peak shift to lower angle value. The Hall effect measurement shows that the 1% Sb-doped films deposited at temperature of 550℃, and annealed for 10 min at 850℃ and in the N2 atmosphere were p-type semiconductor. The films showed a resistivity of 2.19(Ω-cm), hole concentration of 5.62×1017(cm-3), and mobility of 5.06(cm2/Vs). In this study, the Sb-doped p-type ZnO thin films were successfully grown by RF magnetron sputtering with high carrier concentration, low resistivity, and low roughness.

並列關鍵字

RF sputtering ； p-type ； Sb-doped ZnO thin films

參考文獻

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