本論文以脈衝雷射蒸鍍(Pulsed Laser Deposition,PLD)製程分別在C面藍寶石基板上沈積p-type的氧化鋅摻銻(ZnO:Sb)薄膜與n-type的氧化鋅摻鎵(ZnO:Ga)薄膜,薄膜的晶體結構與光學特性分別以XRD、SEM、PL與穿透光譜量測,再以霍爾量測得到其半導體特性與電性。最後再將兩層薄膜合成PN接面,探討是否具備二極體特性,再量測是否具有光電轉換效率。 經過PLD所得到的氧化鋅摻銻薄膜能達到電阻率1.5×10-2(Ω-cm),並且載子濃度與載子移動率分別為1.27×1019 (cm-3)、32.670(cm2/ V-S)。而氧化鋅摻鎵薄膜能達到電阻率4.52×10-4(Ω-cm)、載子移動率32.54(cm2/ V-S)與載子濃度3.92×1020(cm-3);除了良好的電性數據外,同時沈積出的氧化鋅摻鎵薄膜能俱備85%的光穿透率。 最後同將氧化鋅摻鎵與氧化鋅薄膜摻銻同時沈積在C面藍寶石基板上,經過四點探針量測後,發現沈積出的氧化鋅摻鎵/氧化鋅摻鎵薄膜並無二極體特性。其原因可能是氧化鋅摻銻薄膜未確實形成p-type,也有可能是氧化鋅摻銻薄膜有形成p-type,但是由於載子濃夠不夠高,而使得二極體特性無法顯現。
In this study, First we deposited n-type ZnO:Ga thin films and p-type ZnO:Sb thin films on C-sapphire substrates by plused laser deposition(PLD) individually. Then deposite these two films together to form a p-n jucntion structure. To kown thses films optical and electrical properties, we used photoluminescence spectrum、Raman spectrum、transmittance spectrum and Hall effect measurement. First, we obtained the Zno:Sb thin film’s lowest resistivity was 1.5×10-2(Ω-cm) at 3at% with concentration and conductivity were 1.27×1019 (cm-3)、32.670(cm2/ V-S). Then we obstained the ZnO:Ga thin film’s lowest resistivity was 4.52×10-4(Ω-cm) at 3at% with concentration and conductivity were 3.92×1020(cm-3)、32.54(cm2/ V-S).Besides, a visible transmittance of 85% was obtained in the ZnO:Ga thin film. Finally, we deposited these two films at the same substrate to form a p-n junction structure. And we found this sample doesn’t form an p-n junction. We attributed to the ZnO:Sb thin film doesn’t exactly form a p-type ZnO thin film or the p-type ZnO thin film didn’t have enough concentration to form a p-n junction.