脈衝雷射蒸鍍法成長摻銻P型氧化鋅薄膜之研究

Study on The Pulsed Laser Deposition of Sb-doped p-type ZnO Thin Films

王酋為(Chiu-Wei Wang)

指導教授 ： 洪魏寬

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2011年)

摘要

本論文使用脈衝雷射蒸鍍法(pulsed laser deposition)在C面sapphire製做P型氧化鋅摻銻薄膜，並量測其電性與其他特性。本實驗所使用的雷射光源為Nd：YAG雷射，透過晶體將四倍頻266nm波長輸出，脈衝頻率為10Hz，脈衝寬度＜10ns，所使用的靶材為自製以高溫燒結的氧化鋅摻銻靶。實驗中我們克服了氧化鋅摻銻薄膜電阻率過高的問題，使其由大於1x109Ω-cm降至32Ω-cm。另外，使用特殊的成長方法使其提升載子濃度，並且解決了製程穩定性不良的問題。樣品以霍爾量測可測得薄膜之電阻率為23.4-32.78Ω-cm，載子移動率為0.81-9.6 cm2/V-s，載子濃度為1.14 x1016-3.31x1018 cm-3。使用X光繞射儀分析可看出經過摻雜後的氧化鋅薄膜其晶格仍為C軸取向。使用掃描式電子顯微鏡分析可看出薄膜的表面呈現顆粒狀分布。

關鍵字

脈衝雷射蒸鍍 ； 氧化鋅 ； 氧化鋅摻銻

並列摘要

In this study, we deposited p-type ZnO:Sb thin films on the c-plane sapphire substrates by pulsed laser deposition. The Nd:YAG Q-switched laser with 266nm wavelength was used for ablating the ZnO:Sb targets made by sintering pressed ZnO and Sb2O3 powders under high temperature. We found a special procedure which can raise the hole concentration, and simultaneously solve the reproduction issue of the electrical properties of the thin films. The X-ray diffraction indicated that the Sb-doped ZnO thin films were highly c-axis oriented. The SEM images of the films showed quite smooth surfaces with dense grains. The resistivity of the p-type ZnO:Sb films at 3 at% of Sb ranged from 23.4 to 32.78 Ω-cm. The hole concentration and mobility obtained by Hall measurements were 1.14×1016 -3.31×1018cm-3 and 0.81-9.6cm2/ V-s, respectively.

並列關鍵字

PLD ； ZnO ； ZnO:Sb

參考文獻

[3] G.L. Harding, B. Window, E.C. Horrigan, Sol. Energy Matter. 22 , 1991.

Appl. Phys. 90: 824, 2001.

[14] Zeng Y J, Ye Z Z, Xu W Z, et al., Appl. Phys. Leet., 88: 062107, 2006.

[16] Chen L L, Ye Z Z, Lu J G, et at., Appl. Phys. Lett., 89: 252113, 2006.

[18] Xiu F X, Yang Z, Mandalapu L J, et al., Appl. Phys. Lett., 88:052106, 2006.