DLC is consisted of carbon atmos and behave as semiconducting properties, we could use DLC on the applications of semiconductor devices. This research used magnetron sputtering system to sputter chromium or titanium films on the diamond like carbon (DLC) with different parameters. After annealing at distinct temperature, we analyzed the effect of the structure and electricity for DLC films. According to the results, when deposited 300nm thickness of chromium or titanium layer on the DLC substrate and annealed at 400℃ for 5mins, the resistance of DLC films decreased from 4.32×108Ω to 8.92×107Ω .For the metal atmos diffused into the DLC layer by higher annealing temperature. Except doping, we could use this way to increase the electrical properties of DLC films.