多層結構之氮化鋁及氧化鈦生醫感測晶片之應用

Aapplication of aluminum nitride/titanium oxide on biosensing system

洪千惠(Chien-Hui Hung)

指導教授 ： 歐耿良

共同指導教授 ： 吳其昌(Chi-Chang Wu)

臺北醫學大學/口腔醫學院/生醫材料暨工程研究所/碩士(2011年)

摘要

無資料

關鍵字

氮化鋁鈦薄膜 ； 絕緣體金屬 ； 骨整合

並列摘要

The microstructural properties and functional failure of Al-N thin films metal-insulator-metal (MIM) capacitors fabricated by rf sputtering system were studied for the application as biosensing of osseointegration. The film properties and capacitor capability of Al-N films with and without cell culture were determined using glancing incident X-ray diffraction (GIXRD), leakage current density, cross-sectional transmission electron microscopy (XTEM), and stress analysis as well as biocompatibility test. The as-deposited Al film has a face-center cubic structure and a low resistivity of 3.21cm. With increasing nitrogen concentration of Al-N films, phase transformations are identified as fcc-Al ?_ ??-Al(N) ?_ β-Al(N) ?_ fcc-AlNh hcp-AlN. AlN. As the testing result of MIM capacitor, it was manifested that the failure of the AlN MIM capacitors was caused microvoids formed on the film after cell culture. The microvoid having occurred at the cell/AlN MIM capacitor caused it to leak out much of the current to the extent of a few microamperes even at 138k V/cm. The formation of microvoid and low break down voltage was explained by the stress variation during the cell differentiation and proliferation. The stress induced by interaction bone cell and hcp-AlN film resulted in lattice and/or atomic displacement and distortion of AlN. It is believed that the [002] oriented AlN film is shown to perform effectively as a biosensing film to detect the cell differentiation and proliferation by MIM capacitor device. Furthermore, the biosensing film will have a potential for use in wireless technology to monitor the osseointegration in the future.

並列關鍵字

Al-N thin films ； metal-insulator-metal ； osseointegration

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