基於主動元件非線性效應對通訊系統影響越來越深,本研究使用Volterra級數的非線性理論建立異質接面雙載子電晶體(HBT)的非線性模型,由於非線性現象的發生主要是由非線性轉導所造成,因此本論文先針對非線性轉導參數進行萃取並對異質接面雙載子電晶體作非線性現象分析。 本論文大體上可分為兩部分,第一部分為第二章與第三章,此部分較偏重數學理論,應用Volterra級數之數值方法套用於元件上,推導異質接面雙載子電晶體的非線性理論。第二部分為第四章與第五章,配合第一部分數學推導結果,設計不同的微波量測電路架構,量測數據後並求得非線性轉導係數,最後再驗證此非線性理論的正確性。
With nonlinear effects of active devices are more influential on communication system performances, this study dedicates on nonlinear modeling and analysis of heterojunction bipolar transistors (HBTs) based on volterra-series. Since the transconducting current plays a dominant role for the nonlinear phenomenon of HBTs, the thesis focuses on the extraction of nonlinear transconductance coefficients with some nonlinear circuit verification. The thesis is divided into two parts - the first part includes chapters two and three, emphasizing on the fundamental theory in mathematics. The numerical methods based on Volterra-series for the circuit application of HBT devices are evaluated. The second part, including chapters four and five, describes the designed measurement arrangements and the associated results of the HBT transconductance coefficients. The experimental data and extracted coefficients are verified to confirm the correctness of the developed methodology.