四元合金光記錄介質之物性研究

Physical studies of quaternary-alloy Optical Recording Medium

鄭國柔(gwo-rou jeng)

指導教授 ： 劉 宗 平 ； 黃 得 瑞

元智大學/工程學院/電機與資訊工程研究所/碩士(1997年)

摘要

摘 要

本研究是先以磁控濺鍍方式，將In13Ag8Sb49Te30 四元合金靶材鍍
於基板上，再利用DSC技術於不同的升溫速率下量測其晶化溫度，
以及各個晶相所對應之活化能。經計算後，所獲得活化能之值為1.63
eV。然後以DSC數據為為基礎，外插推演得到極高升溫速率時之相
對結晶溫度。藉此模擬在實際動態寫擦時晶化溫度與升溫速率之關
係，以其評估光記錄介質之適用性。另外，尚須運用X射線繞射分
析技術，探討不同退火溫度下材料結構之晶相變化；其相關結果將
於文中一一敘述。

關鍵字

活化能 ； 濺鍍 ； X射線繞射

並列摘要

Abstract

The quaternary alloy In13Ag8Sb49Te30 sputtered on the
polycarbonate substrate was used as the phase- change optical
recording medium on the data storage disk. From DSC
technique ,the relation between the crystallization temperatures and
heating rates of the material could be obtained and the corresponding
activation energy calculated by Kissinger''s plot method was 1.63 eV.
The thermal stability of this material on amorphous state is satisfied.
Through x-ray diffraction analysis, it conducts the results that the as-
deposited recording film is initially an amorphous state , then
becomes face center cubic (FCC) structure , and finally transforms
to equilibrium stable hexagonal closed packed (HCP) structure with
increasing annealing temperatures. Under the assumption of same
phase transformation mechanisms for either the rapid laser heating
or the slow furnace heating, we concluded that the phase
transformation was mainly occurred between the amorphous state
and FCC structure during the laser writing and erasing process on
the recording layer.

並列關鍵字

action energy ； sputtering ； X-ray diffraction