磷砷化銦鎵化合物半導體之光學特性研究

Optical studies in InGaAsP alloy semiconductors

鄭一民(I-Ming Cheng)

指導教授 ： 沈志霖

中原大學/理學院/應用物理研究所/碩士(2001年)

https://doi.org/10.6840/cycu200100257

摘要

中文摘要

摻雜稀土族元素（RE）於Ⅲ－Ⅴ化合物半導體的研究，在提升光電元件特性上扮演著很重要的角色。此乃因為稀土族元素有吸附雜質以降低背景濃度之特性並可發出不受晶體本身影響相當穩定的特性光，以上兩點將有利研製更好的光電元件。
本論文針對摻雜三種不同稀土族元素鈥(Ho)、釹(Nd)、鐿(Yb)的磷化砷銦鎵化合物半導體，以光激螢光光譜、電場調制反射光譜、拉曼散射實驗及持續光電導四種不同光學性質的量測來觀察其變化。在光激螢光光譜中，可以明顯看出摻雜稀土族元素對於磊晶品質的提升。電場調制反射光譜所量測的結果與光激螢光光譜相同，可互相應證。在拉曼散射實驗中，可發現聲子能量與合金無序排列不會因摻雜稀土族元素而產生太大的變化。此外，我們利用持續光電導求出未摻雜樣品的DX-centers電子捕捉能量，與摻雜稀土族元素後所產生的差異。

關鍵字

磷砷化銦鎵 ； 稀土元素 ； 持續光電導 ； 液相磊晶

並列摘要

ABSTRACT

The rare-earth (RE)-doped InGaAsP epitaxial layers, lattice-matched to InP, were prepared by the liquid phase epitaxy system. The RE elements have two important features that improve the devices. One is the chemical ability of the RE elements as the gettering agently to efficient reduce the donor impurities in Ⅲ-Ⅴsemiconductors. Another aspect is that the RE elements incorporated in semiconductors can exhibit a sharp, temperature-stable intra-4f-shell luminescence.
In this work, we investigate the influence of the rare-earth elements(Ho,Nd,Yb) doped into InGaAsP layer by the photoluminescence(PL), the contactless electron-reflectance modulation spectroscopy (CER), the persistent photoconductivity(PPC) and the Raman scattering measurements.
The full width at half maximum (FWHM) of the photoluminescence spectrum of Ho-doped InGaAsP layer exhibits narrower than that of the undoped layer. The same behavior was obtained form CER spectrum. Form the results of PL and CER, the rare earth elements can be used as the impurity gettering agent to reduce the defects of InGaAsP epitaxial layers. On the other hand, the Raman scattering measurement shows that the alloy disorder has not changed by the doping of the rare-earth (RE) elements. In addition, by PPC
measurements, we can obtain the electron capture energy of the defects-centers of the undoped epitaxial layers, and the change of that of the RE-doped epitaxial layers.

並列關鍵字

PPC ； InGaAsP ； Rare-earth ； LPE

參考文獻

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