噴印式高分子薄膜電晶體之製程研究

近年來，採用有機半導體材料作為薄膜電晶體的主動層。因為有機薄膜電晶體（OTFT）中的有機薄膜是建立在無機介電層之上，所以OTFT的特性會受到有機膜層與無機介電層間的物理和化學相互作用的影響。在此論文中，OTFT採用P3HT（poly（3-hexylthiophene））作為主動層，而且SiO2作為閘極的介電層，表面採用一般wet-cleaning、O2-plasma、hexamethyldisilazane (HMDS)和octadecyltrichlorosilane（OTS）等過程處理。其目的是為：藉由介電層/高分子之間介面的不同表面處理，來改善OTFT的特性。利用高分子可溶於有機溶劑中的優點，可採用噴印製程方式去噴印高分子溶液，製作薄膜電晶體的半導體層。以噴印技術來製作電晶體，可以達到大量生產且降低成本的優勢。採用噴印溶液的製程，為製作OTFT提供了一個新的方向。實驗結果顯示，利用OTS進行SiO2的表面處理，可允許了增強載子的遷移率。利用self-assembled monolayer的OTS技術來改變表面位，可導致疏水性，使得遷移率得到改善。從OTS處理的樣品中，所得到的遷移率的最大值為2.026×10-2cm2/Vs。目前，本實驗室利用噴印高分子溶液之過程所製作的薄膜電晶體的半導體膜層，以獲得成功。由噴印樣品所量測之遷移率，可達到3.892×10-3cm2/Vs。然而，與旋轉塗佈元件相比，此技術仍不能令人滿意。噴印製程中的各項實驗若能再改善，那麼元件性能還可再提升。

關鍵字

高分子薄膜電晶體；噴印；有機高分子材料P3HT

並列摘要

The organic semiconductor used as the active layer of thin film transistor have widely been widely studied in recent years. Since the organic film of organic thin film transistor (OTFT) is fabricated on the dielectric layer, the performance of OTFT strongly depends on the semiconductor/dielectric interface due to the physical and chanical interactions between the organic layer and the dielectric layer. In this paper, Poly（3-hexylthiophene）（P3HT）was used as an active layer of OTFT and the dielectric surface of SiO2 gate were treated by the process of normal wet-cleaning、O2-plasma、hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The purpose of this work is to show that the performance canbe improved with different treatments of dielectric/polymer interface. By using the advantages of polymer dissolved in the organic solvent, the polymer solution can be ink-jet printed with ink-jet technique to fabricate the semiconductor layer of OTFT and to reach the purpose of low-cost and mass-production. By using direct ink-jet printing of solution process, it can provide a new route to fabricate OTFT devices. The experimental result show that the surface treatment of SiO2 with OTS can be allowed to enhance the mobility of the carrier. The surface potential changed by using self-assembled monolayer like OTS technique can lead to hydrophobic state so that the mobility is improved. The highest mobility obtained from OTS-treated sample is nearly 2.026×10-2cm2/Vs. The semiconductor layer of thin film transistor fabricated by ink-jet printing polymer solution process has already been succeeded in this laboratory at present. The measurent of mobility obtained from ink-jet printed sample can achieve 3.892×10-3cm2/Vs. However, it is unsatisfactory compared with spin-coating devices. If there experimented in ink-jet printing process can further be modified, the device performances by also be promted.

並列關鍵字

Polymer Thin Film Transistor ； Ink-Jet Printing ； P3HT

參考文獻

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國際替代計量

噴印式高分子薄膜電晶體之製程研究

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