以轉向壓印技術製作有機薄膜電晶體之研究

Study of Organic Thin-Film Transistor Fabricated by Reversal Imprint Technology

黃明田(Ming-Tian Huang)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2008年)

https://doi.org/10.6837/NCNU.2008.00015

摘要

本論文以轉向壓印技術製作出有機薄膜電晶體為主題。實驗中利用高分子材料PEDOT/PSS，沾印於鍍有金屬電極的模具上，藉由改變預烤溫度、壓印溫度、壓印壓力等參數，壓印於oxide基板與polyimide基板，找出PEDOT/PSS轉印的趨勢，最後再壓印於pentacene基板上，製作出有機薄膜電晶體，並利用HP4156進行電性量測，以了解使用傳統蒸鍍罩製程與使用轉向壓印製程並有無使用PEDOT/PSS有機夾層製作出有機薄膜電晶體元件之間特性之影響。 由實驗結果顯示，當壓印壓力與壓印溫度越高時，金屬電極與有機夾層轉印的壓印良率會提高。本實驗中，已可利用傳統微影製程製作而成的模具，成功地藉由壓印的方式將電晶體通道長度縮小至3μm，遠小於蒸鍍罩所能製作出的通道長度。電晶體特性方面，成功利用加入有機夾層，來降低了金屬電極與導通層接面的接觸電阻，提高了載子遷移率，使電性更為提升。

關鍵字

轉向壓印技術 ； PEDOT/PSS ； 有機薄膜電晶體

並列摘要

In this thesis, the organic thin-film-transistor was fabricated by reversal imprint technology with the PEDOT/PSS organic inter-layer. The PEDOT/PSS organic inter-layer was inked on the mold with the metal pad. To find the ink printing condition, the PEDOT/PSS was first inked and contact printed on the silicon dioxide and the polyimide substrate with the different pre-bake temperature, imprinting pressure, and imprinting temperature. Then the PEDOT/PSS and metal pad were reversal imprinted on the pentacene substrate to fabricate organic thin-film-transistors. The electrical characterizations of organic TFTs fabricated by shadow mask and reversal imprinting with/without PEDOT/PSS inter-layer were measured by HP4156 for comparison.

As the results, the imprinting yield increased as the imprint temperature increase. Besides, the channel length of OTFTs can be scaled down to 3μm by using the reversal imprinting process. That is much better than the traditional shadow mask process. The contact resistance between gold electrode and organic active layer was reduced due to the additional PEDOT/PSS inter-layer. Finally, the electrical mobility of organic TFTs fabricated by reversal imprinting was improved.

並列關鍵字

Reversal imprint technology ； PEDOT/PSS ； OTFT

參考文獻

[1] 洪耀釧，有機化學，滄海圖書有限公司，台灣，1996

[2] D. F. Barbe and C. R. Westgate, "Surface state parameters of metal-free phthalocyanine single crystals??, J. PHYS. Chem. Solids, Vol.31, pp. 2679-2687, 1970.

[3] M. L. Petrova and L. D. Rozenshtein, Fiz. Tverd. Tela, Sov. Phys.- Solid State, Vol.12, pp.961, 1970.

[4] F. IT. Kurokawa and S. Nara, “Electrical Properties of Polyacetylene / Polysiloxane Interface??, J. Appl. Phys. , Vol.54, pp.3255-3259, 1983.

[5] Hideki Shirakawa, Edwin J. Louis, Alan G. Macdiarmid “Synthesis of electrically conducting organic polymers: Halogen derivatives of polyacetylene(CH)n", J. C. S. CHEM. COMM., pp.578-580, 1977.