利用金屬離子摻雜技術製作具P-N同質接面的二氧化鈦膜之半導體特性分析

Semiconductor characterization of P-N homojunction TiO2 films using metal-ion doped technology

馬智綱(Chih-Kang Ma)

指導教授 ： 廖朝光

元智大學/工程學院/化學工程與材料科學學系/碩士(2007年)

https://doi.org/10.6838/YZU.2007.00062

摘要

摘要
本研究設計製作具P－N接面現象的二氧化鈦光電極元件，藉由摻雜的方式改變原有性質提高光電轉化效率，並在各種半導體薄膜搭配中找出較好的光電性能組合。首先分析如何調配製作出一個完整均勻且無缺陷的表面覆膜液配方，並藉此製作二氧化鈦陶瓷半導體薄膜，另外以不同摻雜鐵離子狀態對電性作探討，製作摻雜金屬離子陶瓷半導體薄膜，之後將兩種電極薄膜作搭配，研究如何能具有最好性能的條件，利用其組合後所具有的P－N接面現象作光電分析。研究結果顯示，實驗中所調配出的覆膜液配方可得到一完整無缺陷的電極薄膜，搭配用酒精溶解金屬離子狀態可以得到較好的電性，加上各種具有最好性能的條件下可得到最好的P－N接面現象(厚度：摻雜金屬離子電極薄膜需較薄1.26μm、二氧化鈦電極薄膜需較厚2.20μm；金屬離子濃度：在摻雜11mole%金屬離子擁有較佳電性；元件結構設計：摻雜金屬離子電極薄膜在下層、二氧化鈦電極薄膜在上層所呈現的P－N現象較優)，摻雜不同金屬離子會使電性有著明顯的變化，其中又以鋅離子的變化最為顯著，最後進行光電分析，期望P－N接面現象能改善其光電極內電子傳遞，進而提升光電效率之目的。

關鍵字: P－N接面、二氧化鈦電極、摻雜、金屬離子

關鍵字

P－N接面；二氧化鈦電極；摻雜；金屬離子

並列摘要

Abstract

A nano-TiO2 electrode with a p-n homojunction device was designed and fabricated by coating of the nano-TiO2 (n-type) film together with the metal ions-doped TiO2 films. The sample films were prepared with synthesized sol-gel TiO2 which were verified as nano-size particles with anatase structure. The semiconductor characteristic of the sample films was analyzed by current-voltage measurement. Results show that the rectifying characteristic of the TiO2 films was observed from the I-V data illustration for the sample films. In addition, the characteristic of the rectifying curves was influenced by the fabricated conditions of the films, such as the doping concentration of different kinds of metal ions, heating temperature of the films, films thickness and device designed. Furthermore, a MOS device was designed and fabricated using the results in this study.

Keywords：TiO2 electrode, p-n homojunction, dope, I-V measurement, metal ion

並列關鍵字

TiO2 electrode； p-n homojunction； dope；I-V measurement； metal ion

參考文獻

林炬徹、廖朝光〝Fabrication of titanium electrodes with a p-n homo- junction〞元智大學碩士論文(2005)

Asahi, R., Morikawa, T., Ohwaki, T., Aoki, K., Taga, Y.(2001)〝Vis- ible-light photocatalysis in nitrogen-doped titanium oxides〞Sci- ence, 293,p269~271

Bak, T., Nowotny, J., Rekas, M., Sorrell, C.C.(2002)〝Photo electro- chemical hydrogen generation from water using solar energy. Materials- related aspects.〞Journal of Hydrogen Energy , 27, p991 – 1022

Bandara, J., Weerasinghe, H. (2005)〝Solid-state dye-sensitized solar cell with p-type NIO as a hole collecter〞Solar Energy Materials & Solar Ce- lls , 85,p385–390

Domaradzki, J., (2006)〝Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon〞Journal of Non-Crystalline Solids, 352,p2328–2331