本論文使用穩懋半導體所提供的GaAs pHEMT製程實現單埠雙通開關(SPDT SWIC)電路。論文中所討論之單埠雙通開關 (SPDT SWIC) 可應用於移動式WiMAX (802.16e) 系統及固定式WiMAX (802.16-2004) 系統,為實現WiMAX系統中所要求的高功率及高線性度的需求,於電路架構中使用多段FET架構、加入閘極-源極間和閘極-汲極間電容、以及增加電源輸入端至RF路徑上之電阻等方式,藉以改善單埠雙通開關 (SPDT SWIC) 在高功率及高線性度上的需求,此外,在操作電壓為+3V/0V且輸入功率為25dBm時,WiMAX調變訊號之誤差向量幅度特性 (EVM) 低於3%。
A high power GaAs single-pole double-throw (SPDT) antenna switch with high linearity is proposed for WiMAX system applications. The circuit structure is adapted to handle high power operation by using the stacked configuration with the aids of capacitors and resistors to increase the FET dynamic range in OFF state. As WiMAX modulation signal is applied, the signal quality in error-vector-magnitude (EVM) is less than 3% for 25dBm input power with the controlled voltage in +3V/0V.