本論文使用台積電所提供的3P3M 0.35um SiGe 與1P6M 0.18um CMOS製程實現功率放大器與射頻前端電路,包含功率放大器、低雜訊放大器與收發切換開關,可應用於WLAN 802.11g系統及藍芽系統。 為實現高功率及高線性度的要求,在功率放大器中加入了線性器的裝置,可以讓功率放大器同時擁有低靜態電流及高輸出功率;低雜訊放大器利用多閘極架構改善三階交互調變失真以提升IP3;使用多段FET架構與加入閘極電阻方式設計收發切換開關於電路架構中,用以改善在高功率高線性度上的需求。最後探討實驗結果與模擬誤差原因與改進方式。
This thesis utilizes the TSMC 3P3M 0.35um SiGe and 1P6M 0.18um CMOS technologies to design the stand-alone power amplifier (PA) and the front-end chip including PA、low noise amplifier(LNA) and transmit/receive for WLAN 802.11g and Bluetooth systems. The linearizer is added for PAs to satisfy high power and high linearity demands. This design approach has the advantages of low quiescent current and higher output power simultaneously. In addition the multi-gate topology is used for LNA design to improve the intermodulation performances. In the switch design, the stacked FETs with the gate resistor are adopted to increase the power capability and improve the linearity. Finally, the differences between simulations and measurement results are addressed with some possible improvement directions.