具鏡面垂直式發光二極體之研製

The study and fabrication of vertical structure GaN-based light-emitting diodes with a reflection mirror layer

陳毓穎(Yu-Ying Chen)

指導教授 ： 柯正浩

元智大學/電機通訊學院/電機工程學系/碩士(2008年)

摘要

本論文研製之具鏡面垂直式發光二極體是利用晶圓接合(Wafer bonding)及雷射剝離(Laser lift off)技術，成功將磊晶層移轉是矽晶片上，而後進行垂直式結構發光二極體元件之研製。其主要目的是用矽晶片取代藍寶石基板，使發光二極體元件具有較高的散熱性及垂直式結構可改善其元件之電流分佈，進而提升元件發光效率。
在垂直式結構發光二極體元件之製程中，我們提出包括利用ICP乾式蝕刻移除磊晶之緩衝層，以利提高試片表面濃度，以及利用濕式蝕刻將試片浸泡至KOH溶液中製作粗化表面，提升元件亮度，結果顯示垂直式發光二極體在光輸出功率皆優於傳統水平式發光二極體。

關鍵字

發光二極體(LED) ； 雷射剝離 ； 晶圓接合 ； 表面粗化 ； 垂直式發光二極體

並列摘要

In this thesis, we use the wafer bonding technique and laser lift off technique for the fabrication of vertical structure GaN-based light-emitting diodes with a reflection mirror layer. The epi-layer transfer on the Si substrate could be operated in a much higher injection forward current. The significant improvement might be caused by the Si substrate which has higher thermal conductivity than conventional Sapphire substrate.
In experiment, surface treatment to the up most GaN-based epi-layer using inductive coupling plasma (ICP) dry etching and KOH solution wet etching together was proposed to further enhance the performance of vertical structure LEDs. Finally, the result is the brightness of vertical structure LEDs higher then conventional LEDs.

並列關鍵字

LED ； Laser lift off ； Wafer bonding ； Surface roughness ； Vertical type LED

參考文獻

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［6］ T. Gessmann et al. “Omnidirectional Reflective Contacts for