微波放大器與切換器之設計

Design Of Microwave Amplifier And Switch

丁崑耀(Kun-Yao Ting)

指導教授 ： 蔡政翰

元智大學/電機通訊學院/通訊工程學系/碩士(2011年)

https://doi.org/10.6838/YZU.2011.00002

摘要

本論文主要目標為發展應用於無線通訊系統之微波放大器與切換器。
我們使用混成電路方式在FR4印刷電路板上實現2.0GHz微波放大器以及2.0GHz平衡式放大器。微波放大器在2.0GHz量測到的小訊號增益為7.66dB。而平衡式放大器在2.0GHz量測到小訊號增益為5.8dB，且具有較寬的返回損耗。
為了Ku-band的無線通訊應用，我們使用穩懋半導體公司所提供的標準0.15μm砷化鎵 pHEMT製程，來設計並實現10-20GHz寬頻放大器與DC-20GHz切換器電路之單晶微波積體電路。所設計之晶片量測結果將在本論文中說明。使用穩懋半導體低雜訊pHEMT製程之10-20GHz一級和兩級放大器，其量測的小訊號增益量測值分別為9.5dB和17dB。另一個是使用穩懋半導體功率pHEMT製程之10-20GHz兩級放大器，其量測的小訊號增益量測值為20dB。最後，使用穩懋半導體功率pHEMT製程之DC-20GHz切換器，其量測插入損耗和隔離度量測值分別為1.7dB和22.7dB。綜合來說，此次設計的單晶微波積體電路之模擬與量測結果皆具有一致性。

關鍵字

放大器 ； 切換器

並列摘要

The purpose of the thesis is to develop key components, microwave amplifiers and switch, for microwave wireless communication applications.
A 2.0 GHz microwave amplifier and a 2.0 GHz balanced amplifier are designed and implemented on FR4 printed circuit boards using hybrid circuits. The measured results show that the microwave amplifier exhibits small signal gain of 7.66 dB at 2.0 GHz. And the balanced amplifier exhibits small signal gain of 5.8 dB at 2.0 GHz with wider return loss.
For Ku-band applications, 10-20 GHz broadband amplifiers and a DC-20 GHz switch monolithic microwave integrated circuit (MMIC) are designed and fabricated using commercial standard 0.15 μm InGaAs pHEMT process provided by WIN Semiconductors Corp. The measured results are presented and illustrated in this thesis. The 10-20 GHz one-stage and two-stage amplifiers using WIN 0.15 μm low noise pHEMT process achieve small signal gain of 9.5 dB and 17 dB, respectively. Another 10-20 GHz two-stage amplifiers using WIN 0.15 μm power pHEMT process achieves small signal gain of 20 dB. Finally, a DC-20 GHz switch using WIN 0.15 μm power pHEMT process exhibits insertion loss of 1.7dB and the isolation is 22.7 dB. The simulated and measured results have good agreement for the presented MMICs.

並列關鍵字

Amplifier ； Switch

參考文獻

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