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  • 學位論文

氧化鋅變阻器靜電放電之特性研究

Study on electrostatic discharge characterization of ZnO varistors

指導教授 : 謝建德
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摘要


氧化鋅變阻器(varistor)是一種會隨著電壓值不同而改變電阻值的變阻器,具有優越的電流-電壓非歐姆特性(non-ohmic characteristics),使其擁有突波吸收及耐靜電放電(electrostatic discharge, ESD)能力,故又稱為突波吸收器(surge absorber)。一般而言,變阻器在電子產品中可協助穩壓以及耐靜電放電,整個應用面包括通訊設備、半導體保護、電力傳輸系統、控制系統等相關電子產品。 本研究是於商用變阻器配方中添加SiO2,以探討SiO2添加量對此配方之耐靜電放電能力的影響。一般靜電放電能力評估標準為Delta breakdown voltage (△Vb)±10 %。首先,針對商業配方及商業配方添加SiO2的樣品,將分別探討燒結溫度與耐靜電放電能力之關係,再針對自製配方添加SiO2加入煅燒製程,並探討此製程對燒結溫度與耐靜電放電能力之影響。 本研究中,微結構將以 FE-SEM觀察燒結後晶粒與晶界結構,結晶構造將以 XRD分析結晶相,再計算結晶相平均晶粒直徑,性質上則是以靜電放電儀器量測耐靜電放電能力。 實驗結果顯示,不論是商業配方或是添加SiO2配方之靜電放電能力均隨燒結溫度越高,靜電放電能力會下降,並且在燒結溫度為1050℃時均分別表現出最佳之靜電放電能力。商業配方△Vb為-27.4 %,添加1 % SiO2配方△Vb為-29.7 %。而添加0.5 % SiO2之自製配方在額外加入煅燒製程後,將可提升其△Vb為-9.3 %。

並列摘要


ZnO can be applied as a varistor because its resistivity would vary at different applying voltages. Its outstanding current-voltage non-ohmic characteristics makes it good surge absorbing and electrostatic discharge sustaining ability. These ZnO varistors can be called as surge absorber. Generally speaking, varistor in electric product provides the voltage stabilizing and ESD sustaining and this effect can be applied in communication equipment, semiconductor protecting, electric transiting system, controlling system, and so on. This study investigates the effect of SiO2 doping on ESD sustaining ability via doping SiO2 in commercial composition. First, for commercial composition and SiO2-doped composition, the relation between sintering temperature and ESD sustaining ability is discussed, separately. For SiO2-doped composition, an external calcination is involved to investigate its effect on sintering temperature and ESD sustaining ability. The grain and grain boundary structure in microstructure is observed by FE-SEM; crystal structure and average grain size is analyzed by XRD; and the ESD sustaining ability is measured by ESD meter. The experiment result shows that the ESD sustaining ability for both commercial and SiO2-doped composition are decreasing as sintering temperature increasing. The optimal ESD sustaining ability appears at sintering temperature of 1050℃ for two systems, the commercial composition is △Vb about -27.4 % and SiO2-doped composition is △Vb about -29.7 %. Furthrmore, the ESD sustaining ability can be promoted to △Vb about -9.3 % as an external calcination process is applying to SiO2-doped composition.

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