利用射頻電容耦合式四氟乙烷電漿沉積疏水薄膜

Deposition of Hydrophobic Film with 1,1,1,2-tetrafluoroethane Plasma Based on RF-Capacitively Couple Mode Discharge

林政毅(Chen-I Lin)

指導教授 ： 黃駿

元智大學/工程學院/化學工程與材料科學學系/碩士(2011年)

https://doi.org/10.6838/YZU.2011.00170

摘要

本研究使用三種不同基材，分別為矽晶圓 (Wafer)、聚對苯二甲酸乙二酯 (PET) 及碳紙 (Carbon paper)，探討緻密與孔洞基材成膜特性之差別，期望三種基材皆能達疏水效果。實驗中使用射頻式 (Radio-frequency, RF)低壓電漿鍍膜反應器，單體選擇為單鍵四氟乙烷 (C2H2F4, 1,1,1,2 Tetrafluoroethane)。第一部分探討沉積時間、電漿功率及腔體壓力對成膜之影響 ; 第二部份藉由水滴接觸角量測儀觀察實驗後基材之親疏水性變化，並使用Owen法及前進後退角計算電漿處理後基材之表面自由能，結果顯示兩種計算方式可獲得相似之表面自由能趨勢。
實驗分析方面，利用光學膜厚儀估算氟碳膜之成膜厚度、原子力顯微鏡量測表面粗糙度、傅立葉紅外線光譜儀測量薄膜之主要官能基、X射線光電子能譜儀測量表面元素之組成分析探討薄膜之性質，並藉由光放射光譜儀量測電漿輝光放電時之激發物種。
實驗後，基材之表面接觸角可達超疏水角度150∘，表面自由能可降低至5 mJ/m2 以下、AFM量測出之表面粗糙度較小、XPS及FTIR分析發現表面含有大量的CF2及CF物種。最後藉由Wanzel和Cassie方程式，探討疏水性質是否受化學性質影響。

關鍵字

沉積 ； 疏水 ； 四氟乙烷 ； 低壓電漿

並列摘要

This paper uses low pressure plasma polymerization technique to deposit fluorocarbon thin film on three substrates including in silicon wafer, polyethylene terephthalate (PET) and carbon paper. The low-pressure plasma was generated with radio frequency power at 13.56 MHz , and monomer selected for the single bond of 1,1,1,2 tetrafluoroethane (C2H2F4). The investigation studied different operational parameters including in deposition time, RF plasma power level, and system pressure. The surface characteristics of the plasma polymerized films have been analyzed by static contact static angle measurement (CA). In addition, the contact angle results based on Owen method, Advancing and receding angles method revealed that surface free energy would decrease after plasma treatment.
The deposited coatings were analyzed by optical thin-film thickness detector, Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS) and Optical Emission Spectroscopy (OES). The luminous gas phase of plasma state in deposition process was detected by digital camera.
The static contact angle of C2H2F4 plasma polymerized film can reach over 150∘. In addition, surface energy of plasma polymerized film decreased to 5 mJ/m2.. According to AFM analysis, the roughness of plasma polymerized films doesn’t change a lot. XPS and FTIR analysis indicate that the C2H2F4 plasma polymerized film mainly contains CF2 and CF species.

並列關鍵字

polyethylene terephthalate ； carbon paper ； deposition ； hydrophobicity ； 1 ； 2 Tetrafluoroethane ； low pressure plasma ； silicon

參考文獻

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