InGaP/GaAs/Ge三接面串接式太陽能電池優化及製作

Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell

鄭勇釗(Yung-Chao Cheng)

指導教授 ： 賴芳儀

元智大學/電機通訊學院/光電工程學系/碩士(2011年)

摘要

本論文報告將探討目前取得能源之重要領域—太陽能電池。太陽能電池種類眾多，其中又以多接面串接型的太陽能電池轉換效率為最高，因此本論文針對三接面串接式三五族化合物太陽能電池方面作相關研究與製作。
研究內容主要取代現有單層或多層抗反射鍍膜，進而達到製程成本下降，元件表面利用新穎的奈米壓印技術形成次波長結構(Sub-wavelength Structure)，搭配太陽能電池模擬軟體APSYS，模擬蝕刻最佳的深度。其表面氮化矽(silicon nitride)結構之壓印形狀為Rod和Hole，應用在多接面的三五族太陽能電池上，再利用非等向性蝕刻表面的奈米結構，轉印至下方的結構上，比起表面利用單層或多層抗反射鍍膜更適合太陽光頻譜，期許未來能夠應用在高效率的太陽能電池上。

關鍵字

三接面太陽能電池 ； 次波長結構 ； 抗反射

並列摘要

This study is about the important field of energy development-solar cell. Solar cell is varied, among them the multi-junction tandem solar cell is the most efficient. This thesis investigates the research and fabrication of triple-junction tandem Ⅲ-Ⅴ compounds solar cells.
The main topic is substitute of current single or multi-junction anti-reflection layer, and reduces the cost of fabrication. The surface of device adopts novel nano-imprint approach for Sub-wavelength Structure. And we simulate the best depth of etching with APSYS, software for optical properties. There are two patterns for structure of silicon nitride, Rod and Hole. We use this method for the anisotropic etching surface nanostructure of Ⅲ-Ⅴ compound solar cells, and transfer the pattern to the structure below. This technique is suitable for solar spectrum than single or multi-junction anti-reflection layer. It is expected for application of high efficiency solar cell in the future.

並列關鍵字

triple junction solar cell ； Sub-wavelength Structure ； anti-reflection

參考文獻

[4] 邱昰芳、“2010年太陽光電製造業產業分析”、台灣經濟研究院產經資料庫、2009

[1] Lidia Łukasiak and Andrzej Jakubowski、“History of Semiconductors“、Journal of telecommunications and information technology、2010

[3] S.O. Kasap, “Principles of Electronic Materials and Devices”, 3rd Edition, McGraw-Hill, 2005.

[6] M. A. Green, Third Generation Photovoltaics: Advanced Solar Electricity Generation, Springer- Verlag, Berlin, 1-3, (2003)

[8] J. M. Oison, S. R. Kurtz, A. E. Kibbler, and P. Faine、A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell、Appl. Phys. Lett. 56 (1990) 623−625