製程溫度與蝕刻氧化鋅透明導電層之光學與導電性影響分析

The effects of substrate temperature and surface etching on the optical and electrical properties of zinc oxide thin films

吉宗騏(Tsung-Chi Chi)

指導教授 ： 何旭川

元智大學/工程學院/機械工程學系/碩士(2011年)

https://doi.org/10.6838/YZU.2011.00358

摘要

氧化鋅材料取得容易、成本低、無毒性，掺雜Al之ZnO具備良好的光電性質等諸多優點，非常適合做為透明導電氧化物。本文以磁控濺鍍機於Corning Eagle 2000玻璃基材與SUS304不鏽鋼基材表面濺鍍氧化鋅與氧化鋅鋁薄膜，探討製程溫度與蝕刻效應對氧化鋅與氧化鋅鋁薄膜光學與電學性質之影響。另再以原子力顯微鏡與表面輪廓儀觀察薄膜表面微結構形貌及粗糙度，場發射掃描式電子顯微鏡與能量散佈分析儀檢測氧化鋅薄膜微結構與成份。製程溫度包含室溫25℃、100℃、200℃、275℃等四種，以紫外線/可見光分光光譜儀檢測光學性質，以霍爾效應檢測電學性質，顯示薄膜電阻值隨著製程溫度增加而下降，載子濃度與遷移率隨著製程溫度增加而增加。蝕刻效應分為蝕刻濃度與蝕刻時間，蝕刻濃度包含0M、0.01M、0.03M、0.05M，蝕刻時間包含0s、15s、30s、45s，以紫外線/可見光分光光譜儀檢測光學性質，以霍爾效應檢測電學性質。
實驗結果顯示薄膜穿透率隨著製程溫度增加而下降，薄膜電阻值隨著製程溫度增加而下降，載子濃度與遷移率隨著製程溫度增加而增加。薄膜穿透散射率與反射散射率隨著蝕刻濃度與蝕刻時間增加而上升。顯示薄膜電阻值隨著蝕刻濃度與蝕刻時間增加而下降，載子濃度與遷移率隨著蝕刻濃度與蝕刻時間增加而增加。

關鍵字

製程溫度 ； 磁控濺鍍機 ； 光學電性性質 ； 蝕刻效應

並列摘要

Zinc oxide (ZnO) with high transparence and low resistivity has been widely used in transparent conducting electrodes. In this work, un-doped ZnO and Al-doped AZO were deposited on the glass substrate (corning eagle 2000) and stainless steel substrate (SUS 304) by reactive rf magnetron sputtering. The microstructure morphology of the ZnO and AZO films were examined by atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). The effects of substrate temperature on the optical and electric properties of ZnO and AZO films were investigated using UV/Visible spectrophotometer and Hall measurement. Experimental results show that the resistivity of both the ZnO and AZO films is decreasing with the increase of the substrate temperature. The effect of substrate temperature on the transmittance of ZnO and AZO films is insignificant. In addition, ZnO and AZO films were etched by HCl to induce the surface texture. The effects of HCl concentration and etching period on the optical and electric properties of ZnO and AZO film were studied. The surface roughness and scattering of the transmitted light of both the ZnO and AZO film are increasing with the increase of HCl concentration and etching period. The resistivity of ZnO and AZO films is decreasing with the increase of HCl concentration and etching period.

並列關鍵字

zinc oxide ； substrate temperature ； etching ； transmittance ； resistivity

參考文獻

[5]. Y. Kashiwaba, K. Sugawara, K. Haga, H. Watanabe, B. P. Zhang and Y. Segawa,Thin Solid Films, 411 87-90 (2002).

[6]. K. C. Hsiao, S. C. Liao and Y. J. Chen, Material Science and Engineering A, 44771-76 (2007).

[9]. H. M. Ali, M. M. Abd El-Raheem, N. M. Megahed and H. A. Mohamed, Journal of Physics and Chemistry of Solids, 67 1823-1829 (2006).

[12]. R. K. Shukla, Anchal Srivastava, Atul Srivastava and K. C. Dubey, Journal of Crystal Growth, 294 427-431 (2006).

[13]. M. A. Martinez, J. Herrero and M. T. Gutierrez, Solar Energy Materials and Solar Cells, 45 75-86 (1997).