利用氧化鋅設計與製作場效電晶體的探討

Investigation of Design and Fabrication of ZnO-based Field-Effect Transistors

林道凱(Tai-Kai Lin)

指導教授 ： 廖朝光

元智大學/工程學院/化學工程與材料科學學系/碩士(2009年)

https://doi.org/10.6838/YZU.2009.00314

摘要

本研究利用陶瓷半導體氧化鋅，成功的設計與製作出金屬-半導體場效電晶體(MESFET)與金屬-絕緣層-半導體場效電晶體(MOSFET)兩種不同場效電晶體(FET)元件。首先利用商業用的氧化鋅粒子，配製成摻雜金屬離子(Fe3+與Cr3+)與未摻雜的氧化鋅溶液，接著於ITO導電基材上，分別塗佈氧化鋅薄膜與摻雜金屬離子氧化鋅薄膜，形成半導體接面的二極體元件，並且量測ZnO MESFET元件的電性；接著以ITO玻璃為導電基材，分別塗佈溶凝膠二氧化矽薄膜與氧化鋅薄膜，製作並且量測ZnO MOSFET元件的特性。實驗結果顯示，摻雜金屬離子後的氧化鋅薄膜，其結構與電性皆有明顯的改變；經由I-V(Voltage-Current)量測MESFET元件，以Cr3+-ZnO MESFET元件的電性最佳且電流穩定，臨界電壓也以Cr3+-ZnO MESFET元件的16V較佳；另外，MOSFET元件則以ZnO MOSFET元件的電性較好與穩定，臨界電壓也以ZnO MOSFET元件18V較佳。由於影響電晶體效益主要在元件的材料上，因此藉由材料的改善與製作的方式，期望能夠在場效電晶體的電性有所提升。

關鍵字

氧化鋅薄膜、摻雜金屬離子、半導體接面、MESFET、MOSFET

並列摘要

ZnO-based metal-semicoductor field effect transistor (MESFET) and metal-oxide-semicoductor field effect transistor (MOSFET) were designed and fabricated by spin coating of commercial ZnO, metal ions-doped ZnO and sol-gel SiO2 thin films. The ZnO-FET devices were fabricated on the ITO glass as the bottom gate and on the ZnO thin film as the source and drain. The characteristic of the MESFETs with a semiconductor junction diode and MOSFETs were illustrated by I-V measurement. The performance of the FET devices can be controlled by the gate electrode to transform the trend of the current-voltage of the source and drain. The result shown Cr3+-ZnO MESFET with a better normally on/off currents and threshold voltage than Fe3+-ZnO MESFET. On the other hand, ZnO MOSFET had a better than normally on/off currents and threshold voltage than Fe3+-ZnO MOSFET. The performance of the elecrtric properties of the FET devices could be affected by the conditions of the materials and fabrications, such as metal ion-doped, heating temperature, and thickness of films.

並列關鍵字

ZnO thin film, metal ion-doped, semiconductor junction, MESFET, MOSFET

參考文獻

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