利用奈米氧化鋅設計與製作互補式場效電晶體探討

Investigation of design and fabrication of complementary field-effect transistors using nano-ZnO

姜欣妮(Hsin-Ni Chiang)

指導教授 ： 廖朝光

元智大學/工程學院/化學工程與材料科學學系/碩士(2011年)

摘要

本研究將氧化鋅薄膜與摻雜金屬離子的氧化鋅薄膜相互配合，可得到N型與P型的氧化鋅場效電晶體(ZnO-Field Effect Transistor；ZnO-FET)，把N型與P型的氧化鋅場效電晶體兩者組合，可成功得到具有反相器(inverter)效應的氧化鋅互補式場效電晶體(ZnO Complementary-FET ；ZnO-C-FET)。首先以醋酸鋅與單元醇胺為前驅物，利用溶膠凝膠法製備出的奈米級氧化鋅粉末配成未摻雜與摻雜金屬離子的氧化鋅漿液，在ITO玻璃上使用旋轉塗佈法製備氧化鋅薄膜，經熱處理後可得到氧化鋅多層膜的樣品，結果顯示氧化鋅與氧化鋅摻雜金屬離子的多層膜具有二極體效應；接著以氧化鋅薄膜與氧化鋅摻雜金屬離子薄膜來製作場效電晶體，當把氧化鋅摻雜金屬離子層置於下層，氧化鋅層置於上層時，可得到N型氧化鋅金屬場效電晶體(N-ZnO-FET)，若將兩層反置，則可得P型氧化鋅金屬場效電晶體(P-ZnO-FET)，且以摻雜鈦離子的氧化鋅電晶體具有較佳的性質。接著組合所製成摻雜鈦離子之N型與P型氧化鋅場效電晶體，可製作出氧化鋅互補式場效電晶體。

關鍵字

氧化鋅 ； 摻雜離子 ； Sol-Gel ； 互補式場效電晶體

並列摘要

Combining ZnO thin films with doped metal ions ZnO thin films can obtain N-type and P-type ZnO field-effect transistor (ZnO-FET). Constituting the N-type and P-type ZnO-FET can be successfully obtain complementary zinc oxide field-effect transistors (ZnO Complementary-FET) which has the effect like inverter. Using zinc acetate and MEA as precursor to synthesize ZnO by sol-gel method can get nano-ZnO powder. Prepare undoped and doped metal ions zinc oxide liquid by using synthesized nano zinc oxide powder, then spin coat ZnO thin film onto ITO glass. After annealing, we can obtain ZnO/ZnO-Metal multilayer sample. The results shows the sample exhibit a diode effect. Additionally fabricated ZnO field effect transistor by using doped with metal ions and undoped ZnO multilayer sample. The next step is to fabricate ZnO field effect transistors by using metal ions doped and undoped ZnO multilayer sample. If we arrange ZnO as upper layer and metal ion doped ZnO as lower layer, we can get N-type zinc oxide field-effect transistors (N-ZnO FET). We can obtain P-type zinc oxide field-effect transistors (P-ZnO FET) if change the order of the two layers. Connecting the N-type and P-type ZnO field-effect transistors , we can obtain complementary zinc oxide field-effect transistor.

並列關鍵字

ZnO thin film ； doped metal ions ； Sol-Gel ； complementary field-effect transistor

參考文獻

林道凱，利用氧化鋅設計與製作場效電晶體的探討，碩士論文，元智

汪建榮，添加鈦或鈷對ZnO薄膜之影響，碩士論文，國立成功大學

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