Split gate flash memory has the advantage of a higher programming current and efficiency than conventional stacked gate flash memories. It has an additional select gate and requires one bit-line contact per cell, therefore cannot easily achieve high storage density, nor can it be easily scaled down. This investigation proposes a novel split gate flash cell with a vertical trenched transistor. Incorporating a unique ballistic hot electron injection mechanism and a trench select gate structure, this cell not only offers high program efficiency, but also is 50% smaller than conventional planar split gate flash memories, which make it more competitive for high-density storage applications. The flash memory cells are best arranged in a virtual ground AND-type array, which is thus called Ballistic injection AND-Type Flash EEPROM (BiAND). The BiAND flash memory cell can be very efficiently and rapidly written by adapting the source side injection operation. Additionally, the sharing select gate effect, that is widening the trenched select transistor increases the programming current and the read current, is also discussed comprehensively. This thesis introduces the unique flash memory cell with the trenched select transistor. The process flows for fabricating the BiAND flash memory cell are designed, simulated and implemented. The detailed electrical characteristics of the BiAND cell are accurately measured. The cell performance is discussed extensively to evaluate the feasibility of this novel cell.