橫向型擴散金氧半場效電晶體之非匹配特性研究

Study of the LDMOSFET Mismatch Characteristics

廖唯理(Wei-Li Liao)

指導教授 ： 龔正

國立清華大學/電機資訊學院/電子工程研究所/碩士(2007年)

摘要

隨著半導體產業的發展，高功率元件經常被應用於許多電力電子方面。功率元件為了與平面製程整合，需將傳統垂直式之元件結構改成橫向式的設計，因而可與低壓電路整合於同一晶片上。藉由元件模擬軟體TCAD 的使用，我們能更瞭解元件內部操作原理。最後將透過軟體電腦模擬的方式，可以清楚知道在不同條件設定下的非匹配特性，有效的掌握元件於最佳化之結果。

非匹配對元件之衝擊越來越重要主要是因為元件線寬越來越小，針對元件中啟始電壓、飽和電流與電導的非匹配性質進行分析與量測。本文關注LDMOSFET之精準度，藉由一些量測數據以預測元件操作時之非匹配行為，並利用統計的方式分析物理造成的因素與元件製程技術非匹配的關係。

關鍵字

非匹配 ； 橫向型擴散金氧半場效電晶體 ； 高功率元件 ； 精準度

並列摘要

High Power metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied to power electronics owing to great semiconductor industry. In order to integrate power devices with planar IC process, the devices’ structure must be changed from the traditional vertical structure to lateral design, such that they can be integrated in the same chip. We can make the operation principle inside LDMOSFET clearly by performing the TCAD simulation. Finally, we use software simulation to obtain the details of mismatch characteristics under different situations. Careful tuning is made to obtain the optimum results.

The impact of device mismatch becomes more important because the dimensions of the devices are reduced. The matching properties of the threshold voltage, saturation current, and conductance of the device have been analyzed and measured. This thesis is concerned with the analyzable precision for LDMOSFET, and predicts the mismatch behavior of devices over a wide operating range using a set of measured data. Statistical methods are used to analyze physical causes that relate the mismatch to the process technologies.

並列關鍵字

Mismatch ； LDMOSFET ； Power devices ； Precision

參考文獻

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