Study of the thermal conductivity for single indium oxide nanowire

氧化銦奈米線熱傳導係數的研究

洪健淋(Chien-Lin Hung)

指導教授 ： 周立人 ； 蔡哲正

國立清華大學/工學院/材料科學工程學系/碩士(2010年)

https://doi.org/10.6843/NTHU.2010.00032

摘要

This thesis is mainly focused on the investigation and analysis of thermal conductivity (κ value) for a single-crystalline indium oxide nanowire (In2O3 NW). With the help of e-beam lithography technique and RIE process, the single In2O3 NW is successfully suspended on the SiO2 substrate; and through 3ω method, the κ value for a single In2O3 NW is measured.
The IV characteristic indicates the electrical resistivity is 5.38 × 10-3 Ω-cm at 300 K, which is the best report owing to the oxygen vacancies formed during the growth process. The κ value appeals a descending trend as temperature rising within 300-375 K; And from the calculation of Wiedemann-Franz law, it is proved that phonon dominates the thermal transport. A post-annealing process above measured temperature is also performed. The κ value becomes larger than the as grown one, and that can be attributed to the reduction of oxygen vacancies after post-annealing process.

關鍵字

氧化銦 ； 奈米線

並列摘要

本論文主要研究單根單晶結構的氧化銦奈米線之熱傳導係數。藉由電子束微影的技術和反應式離子蝕刻機台的幫助，單根氧化銦奈米線成功地懸掛在二氧化矽的基板上；而熱傳導係數的量測則是藉由（3ω　method）所量測。
　　此單根奈米線的電阻率為5.38 × 10-3 Ω-cm，和之前文獻上的報導相比是最好的，推測是由於合成過程中產生的氧缺陷所致。熱傳導係數的結果顯示，其值會隨著溫度的上升而下降；計算結果指出聲子是此單根奈米線熱傳導的主要載子。對此單根奈米線做了後續退火的實驗發現，其熱傳導係數比原始的結果還要高，這是因為退火後造成電阻上升及缺陷減少所致。

並列關鍵字

thermal conductivity ； indium oxide ； nanowire

參考文獻

[1] S. Iijima, “Helical Microtube of Graphitic Carbon,” Nature 354, 56-58 (1991)

[2] B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang and Charles M. Lieber “Coaxial silicon nanowires as solar cells and nanoelectronic power sources,” Nature 449, 885-889 (2007)

[3] G. Chen, and A. Shakouri, “Heat Transfer in Nanostructures for Solid-State Energy Conversion,” J. Heat Transfer 124, 242-252 (2002)

[5] P. Alivisatos, “Semiconductor Clusters, Nanocrystals, and Quantum Dots,” Science 271, 933-934 (1999)

[7] G. Markovich, C. P. Collier, and J. R. Heath, “Architectonic Quantum Dot Solid,” Acc. Chem. Res. 32, 425-423 (1999)