This thesis is mainly focused on the investigation and analysis of thermal conductivity (κ value) for a single-crystalline indium oxide nanowire (In2O3 NW). With the help of e-beam lithography technique and RIE process, the single In2O3 NW is successfully suspended on the SiO2 substrate; and through 3ω method, the κ value for a single In2O3 NW is measured. The IV characteristic indicates the electrical resistivity is 5.38 × 10-3 Ω-cm at 300 K, which is the best report owing to the oxygen vacancies formed during the growth process. The κ value appeals a descending trend as temperature rising within 300-375 K; And from the calculation of Wiedemann-Franz law, it is proved that phonon dominates the thermal transport. A post-annealing process above measured temperature is also performed. The κ value becomes larger than the as grown one, and that can be attributed to the reduction of oxygen vacancies after post-annealing process.
本論文主要研究單根單晶結構的氧化銦奈米線之熱傳導係數。藉由電子束微影的技術和反應式離子蝕刻機台的幫助,單根氧化銦奈米線成功地懸掛在二氧化矽的基板上;而熱傳導係數的量測則是藉由(3ω method)所量測。 此單根奈米線的電阻率為5.38 × 10-3 Ω-cm,和之前文獻上的報導相比是最好的,推測是由於合成過程中產生的氧缺陷所致。熱傳導係數的結果顯示,其值會隨著溫度的上升而下降;計算結果指出聲子是此單根奈米線熱傳導的主要載子。對此單根奈米線做了後續退火的實驗發現,其熱傳導係數比原始的結果還要高,這是因為退火後造成電阻上升及缺陷減少所致。